TFF11105HN/N1,118

Basic Information Overview

• Category: Electronic Component
• Use: Signal Amplification
• Characteristics: High Gain, Low Noise
• Package: SOT-23
• Essence: Transistor
• Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications and Parameters

• Type: NPN Transistor
• Collector Current (Ic): 100mA
• Collector-Emitter Voltage (Vceo): 50V
• Emitter-Base Voltage (Vbe): 5V
• Power Dissipation (Pd): 225mW
• Transition Frequency (ft): 300MHz
• Operating Temperature Range: -55°C to +150°C

Detailed and Complete Pin Configuration

The TFF11105HN/N1,118 transistor has the following pin configuration:

1. Base (B)
2. Emitter (E)
3. Collector (C)

Functional Characteristics

• High voltage gain
• Low noise figure
• Fast switching speed
• Wide frequency response
• Small package size

Advantages and Disadvantages

Advantages: - High gain allows for signal amplification in various applications - Low noise figure ensures minimal distortion in signal processing - Fast switching speed enables quick response in digital circuits - Wide frequency response makes it suitable for a range of applications - Small package size saves space in electronic devices

Disadvantages: - Limited maximum collector current (100mA) - Restricted operating temperature range (-55°C to +150°C)

Applicable Range of Products

The TFF11105HN/N1,118 transistor is commonly used in electronic devices that require signal amplification, such as audio amplifiers, radio receivers, and communication systems.

Working Principles

The TFF11105HN/N1,118 transistor operates based on the principles of bipolar junction transistors. It amplifies weak input signals by controlling the flow of current between its collector and emitter terminals.

Detailed Application Field Plans

The TFF11105HN/N1,118 transistor can be applied in various fields, including: 1. Audio Amplification: Enhancing sound signals in audio systems. 2. Radio Frequency (RF) Amplification: Boosting weak RF signals in radio receivers. 3. Communication Systems: Amplifying signals in wireless communication devices. 4. Sensor Circuits: Amplifying sensor output signals for further processing. 5. Oscillator Circuits: Generating stable oscillations in electronic circuits.

Detailed Alternative Models

Some alternative models to the TFF11105HN/N1,118 transistor include: - BC547 - 2N3904 - PN2222 - 2SC945 - MPSA42

5 Common Technical Questions and Answers

1. Q: What is the maximum collector current of the TFF11105HN/N1,118 transistor? A: The maximum collector current is 100mA.

2. Q: What is the operating temperature range of the TFF11105HN/N1,118 transistor? A: The operating temperature range is -55°C to +150°C.

3. Q: What is the package type of the TFF11105HN/N1,118 transistor? A: The package type is SOT-23.

4. Q: What is the power dissipation of the TFF11105HN/N1,118 transistor? A: The power dissipation is 225mW.

5. Q: What is the transition frequency of the TFF11105HN/N1,118 transistor? A: The transition frequency is 300MHz.

This concludes the encyclopedia entry for the TFF11105HN/N1,118 transistor.