Viz Specifikace pro podrobnosti o produktu.
2SB1124T-TD-E
Product Category: Transistor
Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching in electronic circuits - Characteristics: High current gain, low noise, and high frequency capability - Package: TO-252-3 (DPAK) - Essence: NPN silicon epitaxial planar transistor - Packaging/Quantity: Typically packaged in reels of 3000 units
Specifications: - Collector-Base Voltage (VCBO): 60V - Collector-Emitter Voltage (VCEO): 50V - Emitter-Base Voltage (VEBO): 6V - Collector Current (IC): 3A - Power Dissipation (PD): 2W - Transition Frequency (fT): 150MHz - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration: - Pin 1 (Emitter): Connected to the emitter region of the transistor - Pin 2 (Base): Connected to the base region of the transistor - Pin 3 (Collector): Connected to the collector region of the transistor
Functional Features: - High current gain for amplification applications - Low noise characteristics suitable for signal processing - High frequency capability for RF applications
Advantages: - Suitable for high-frequency applications - Low noise performance - Compact DPAK package for efficient heat dissipation
Disadvantages: - Limited power dissipation capability compared to larger packages - Relatively lower voltage and current ratings compared to some alternative models
Working Principles: The 2SB1124T-TD-E operates based on the principles of bipolar junction transistors, utilizing the interaction between minority and majority charge carriers in the semiconductor material to control current flow.
Detailed Application Field Plans: - Audio amplification circuits - Radio frequency (RF) amplifiers - Switching circuits in electronic devices
Detailed and Complete Alternative Models: - 2SD882, 2N3904, BC547, BC548, etc.
This comprehensive entry provides a detailed overview of the 2SB1124T-TD-E transistor, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 2SB1124T-TD-E v technických řešeních
What is the maximum collector current of 2SB1124T-TD-E?
- The maximum collector current of 2SB1124T-TD-E is 3A.
What is the maximum collector-emitter voltage of 2SB1124T-TD-E?
- The maximum collector-emitter voltage of 2SB1124T-TD-E is 50V.
What is the power dissipation of 2SB1124T-TD-E?
- The power dissipation of 2SB1124T-TD-E is 1W.
What are the typical applications of 2SB1124T-TD-E?
- Typical applications of 2SB1124T-TD-E include audio amplification, switching circuits, and general purpose electronic applications.
What is the gain (hFE) of 2SB1124T-TD-E?
- The gain (hFE) of 2SB1124T-TD-E typically ranges from 60 to 120.
Is 2SB1124T-TD-E suitable for low-power applications?
- Yes, 2SB1124T-TD-E is suitable for low-power applications due to its low power dissipation and moderate gain.
Can 2SB1124T-TD-E be used in high-frequency circuits?
- While it is not specifically designed for high-frequency applications, 2SB1124T-TD-E can be used in moderate frequency circuits with appropriate design considerations.
What are the thermal characteristics of 2SB1124T-TD-E?
- The thermal resistance from junction to case (RthJC) of 2SB1124T-TD-E is typically 83°C/W.
Does 2SB1124T-TD-E require a heat sink in certain applications?
- Depending on the specific application and power dissipation, a heat sink may be required to ensure proper thermal management.
Are there any recommended complementary transistors to use with 2SB1124T-TD-E?
- Complementary transistors such as 2SD1802T-TD-E or similar PNP transistors can be used in conjunction with 2SB1124T-TD-E for complementary pair configurations.