ON Semiconductor
Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
2SC5551AF-TD-E
Zobrazit detail DataSheets

2SC5551AF-TD-E

Product Overview

Category

The 2SC5551AF-TD-E belongs to the category of semiconductor devices.

Use

This product is commonly used in electronic circuits for amplification and switching applications.

Characteristics

  • High voltage capability
  • Low saturation voltage
  • High current gain

Package

The 2SC5551AF-TD-E is typically available in a TO-220F package.

Essence

This product is essential for designing and building electronic circuits that require high voltage amplification and switching capabilities.

Packaging/Quantity

The 2SC5551AF-TD-E is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Collector-Base Voltage (VCBO): 160V
  • Collector-Emitter Voltage (VCEO): 160V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 0.6A
  • Power Dissipation (PD): 1.5W
  • Transition Frequency (fT): 150MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The 2SC5551AF-TD-E has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

  • High voltage capability allows for use in various electronic applications.
  • Low saturation voltage ensures efficient operation in switching circuits.
  • High current gain enables effective signal amplification.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low saturation voltage
  • High current gain

Disadvantages

  • Limited collector current compared to other transistors in the same category
  • Relatively lower transition frequency

Working Principles

The 2SC5551AF-TD-E operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.

Detailed Application Field Plans

This transistor is widely used in audio amplifiers, power supply circuits, and electronic switches due to its high voltage capability and low saturation voltage.

Detailed and Complete Alternative Models

Some alternative models to the 2SC5551AF-TD-E include: - 2N5551 - BC557 - MPSA42

In conclusion, the 2SC5551AF-TD-E is a versatile semiconductor device with high voltage capability and low saturation voltage, making it suitable for various electronic applications such as amplification and switching circuits.

Word Count: 368

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 2SC5551AF-TD-E v technických řešeních

Sure, here are 10 common questions and answers related to the application of 2SC5551AF-TD-E in technical solutions:

  1. What is the maximum collector current (IC) of 2SC5551AF-TD-E?

    • The maximum collector current (IC) of 2SC5551AF-TD-E is 0.7A.

  2. What is the maximum collector power dissipation (PC) of 2SC5551AF-TD-E?

    • The maximum collector power dissipation (PC) of 2SC5551AF-TD-E is 0.625W.

  3. What is the voltage rating for 2SC5551AF-TD-E?

    • The voltage rating for 2SC5551AF-TD-E is 160V.

  4. Can 2SC5551AF-TD-E be used in audio amplifier circuits?

    • Yes, 2SC5551AF-TD-E can be used in audio amplifier circuits due to its high voltage and current capabilities.

  5. Is 2SC5551AF-TD-E suitable for switching applications?

    • Yes, 2SC5551AF-TD-E is suitable for switching applications due to its high collector current and voltage ratings.

  6. What are the typical applications of 2SC5551AF-TD-E?

    • Typical applications of 2SC5551AF-TD-E include audio amplifiers, switching circuits, and general-purpose amplification.

  7. What is the gain (hFE) range of 2SC5551AF-TD-E?

    • The gain (hFE) range of 2SC5551AF-TD-E is 120-240.

  8. Does 2SC5551AF-TD-E require a heat sink in high-power applications?

    • Yes, in high-power applications, it is recommended to use a heat sink with 2SC5551AF-TD-E to dissipate heat effectively.

  9. Can 2SC5551AF-TD-E be used in low-noise amplifier designs?

    • Yes, 2SC5551AF-TD-E can be used in low-noise amplifier designs due to its moderate gain and low noise characteristics.

  10. What are the thermal characteristics of 2SC5551AF-TD-E?

    • The thermal resistance from junction to case (RthJC) of 2SC5551AF-TD-E is 83°C/W, and the thermal resistance from junction to ambient (RthJA) is 200°C/W.

These questions and answers cover various aspects of the application of 2SC5551AF-TD-E in technical solutions. If you have more specific questions, feel free to ask!