BD676G Product Overview

Introduction

BD676G is a semiconductor product belonging to the category of power transistors. This device is widely used in various electronic applications due to its unique characteristics and functional features.

Basic Information Overview

Category: Power Transistor
Use: Amplification and Switching in Electronic Circuits
Characteristics: High Power Dissipation, Low Saturation Voltage
Package: TO-220AB
Essence: NPN Epitaxial Silicon Transistor
Packaging/Quantity: Typically packaged in reels or tubes, quantity varies by manufacturer

Specifications

Collector-Emitter Voltage (VCEO): 45V
Collector Current (IC): 4A
Power Dissipation (PD): 40W
Transition Frequency (FT): 3MHz
Operating Temperature Range: -65°C to 150°C

Detailed Pin Configuration

The BD676G transistor has a standard TO-220AB package with three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

High Current Gain
Low Saturation Voltage
Fast Switching Speed
Excellent Linearity

Advantages and Disadvantages

Advantages

Suitable for high-power applications
Low saturation voltage reduces power loss
Fast switching speed enhances efficiency

Disadvantages

Limited operating temperature range
May require heat sink for high-power applications

Working Principles

The BD676G operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to amplify or switch electronic signals.

Detailed Application Field Plans

The BD676G is commonly used in the following applications: - Audio Amplifiers - Power Supplies - Motor Control Circuits - LED Drivers

Detailed and Complete Alternative Models

Some alternative models to BD676G include: - BD675G - BD677G - BD678G - 2N3055

In conclusion, the BD676G power transistor offers high performance and reliability in various electronic applications, making it a popular choice among engineers and designers.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací BD676G v technických řešeních

What is the BD676G?
- The BD676G is a PNP power transistor designed for use in general-purpose amplifier and switching applications.
What are the key features of the BD676G?
- The BD676G features a high current capability, low saturation voltage, and high transition frequency, making it suitable for various technical solutions.
What are the typical applications of the BD676G?
- Typical applications include audio amplifiers, power supply circuits, motor control, and general switching purposes.
What is the maximum collector current of the BD676G?
- The maximum collector current is 4A, making it suitable for medium-power applications.
What is the maximum collector-emitter voltage of the BD676G?
- The maximum collector-emitter voltage is 45V, allowing for versatility in different circuit designs.
What is the thermal resistance of the BD676G?
- The thermal resistance is typically 2.5°C/W, which is important for managing heat dissipation in various technical solutions.
Is the BD676G suitable for high-frequency applications?
- Yes, the high transition frequency of the BD676G makes it suitable for moderate high-frequency applications.
What are the recommended operating conditions for the BD676G?
- The recommended operating conditions include a collector current of 1A to 4A, a collector-emitter voltage of 45V, and an operating temperature range of -65°C to 150°C.
Does the BD676G require external protection diodes?
- Yes, external protection diodes may be required to ensure safe operation, especially in inductive load applications.
Where can I find detailed specifications and application notes for the BD676G?
- Detailed specifications and application notes can be found in the datasheet provided by the manufacturer or distributor of the BD676G.