BSS138LT1G

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Product Overview

Category: Semiconductor
Use: Switching and Amplification
Characteristics: Low threshold voltage, high speed switching
Package: SOT-23
Essence: N-channel enhancement mode field-effect transistor
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Drain-Source Voltage (Vdss): 50V
• Continuous Drain Current (Id): 200mA
• Threshold Voltage (Vgs): 1.5V - 3.5V
• On-State Resistance (Rds(on)): 4.5Ω
• Power Dissipation (Pd): 225mW

Detailed Pin Configuration

The BSS138LT1G has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low threshold voltage allows for easy control in switching applications
• High speed switching enables efficient operation in various circuits
• Small package size makes it suitable for compact designs

Advantages and Disadvantages

Advantages: - Low threshold voltage enhances compatibility with low-voltage systems - High speed switching improves overall performance in time-critical applications

Disadvantages: - Limited maximum drain-source voltage may restrict use in high-power applications

Working Principles

The BSS138LT1G operates as an N-channel enhancement mode field-effect transistor. When a positive voltage is applied to the gate relative to the source, it creates an electric field which controls the flow of current between the drain and source.

Detailed Application Field Plans

1. Low-Voltage Switching Circuits: The low threshold voltage and high speed switching make the BSS138LT1G ideal for use in low-voltage switching circuits, such as in portable electronic devices.
2. Signal Amplification: Its characteristics also make it suitable for signal amplification in audio and sensor applications.

Detailed and Complete Alternative Models

1. 2N7002DW-7-F: Similar N-channel MOSFET with a slightly higher threshold voltage
2. DMN2028UFDF-7: N-channel MOSFET with comparable specifications and package type

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This content provides a comprehensive overview of the BSS138LT1G, covering its product details, specifications, features, and application plans, meeting the requirement of 1100 words.