CAT24AA16WI-GT3

Product Overview

Category

The CAT24AA16WI-GT3 belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This product is commonly used for non-volatile data storage in various electronic devices, such as microcontrollers, sensors, and communication modules.

Characteristics

• Non-volatile: The CAT24AA16WI-GT3 retains stored data even when power is removed.
• High endurance: It supports a high number of write/erase cycles, ensuring long-term reliability.
• Low power consumption: The chip operates at low power levels, making it suitable for battery-powered devices.
• Small form factor: The package size is compact, enabling integration into space-constrained designs.

Package

The CAT24AA16WI-GT3 is available in a small 8-pin SOIC (Small Outline Integrated Circuit) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably, even in the absence of power.

Packaging/Quantity

The CAT24AA16WI-GT3 is typically packaged in reels containing a quantity of 2500 units.

Specifications

• Memory capacity: 16 kilobits (2 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Operating voltage: 1.7V to 5.5V
• Operating temperature range: -40°C to +85°C
• Write endurance: 1 million cycles
• Data retention: 100 years

Detailed Pin Configuration

The CAT24AA16WI-GT3 features the following pin configuration:

| Pin Name | Function | |----------|----------| | VCC | Power supply voltage | | GND | Ground | | SDA | Serial data input/output | | SCL | Serial clock input |

Functional Features

• Byte-level read and write operations: The CAT24AA16WI-GT3 allows individual bytes to be written or read, providing flexibility in data manipulation.
• Write protection: It supports software write protection of memory blocks, preventing accidental modification of critical data.
• Sequential read mode: This feature enables efficient retrieval of consecutive memory locations without the need for repeated address transmissions.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data integrity even during power loss.
• High endurance allows for frequent data updates without compromising reliability.
• Low power consumption extends battery life in portable devices.
• Compact package size facilitates integration into space-constrained designs.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Slower write speeds compared to some alternative memory solutions.
• Relatively higher cost per unit compared to certain lower-end memory options.

Working Principles

The CAT24AA16WI-GT3 utilizes EEPROM technology, which employs a combination of floating-gate transistors and electrically isolated gates to store and retrieve digital information. When data is written, charges are trapped in the floating gate, altering the transistor's behavior and preserving the stored value. During read operations, the charge state of the floating gate is detected, allowing the retrieval of the stored data.

Detailed Application Field Plans

The CAT24AA16WI-GT3 finds applications in various fields, including but not limited to: 1. Internet of Things (IoT) devices: Used for storing configuration settings, sensor data, and firmware updates. 2. Automotive electronics: Employed in modules such as engine control units (ECUs), airbag systems, and infotainment systems for data storage. 3. Industrial automation: Utilized in programmable logic controllers (PLCs), motor drives, and human-machine interfaces (HMIs) for non-volatile memory storage. 4. Consumer electronics: Integrated into devices like smartwatches, fitness trackers, and remote controls for data storage purposes.

Detailed and Complete Alternative Models

1. CAT24AA08WI-GT3: A lower-capacity variant with 8 kilobits of memory.
2. CAT24C02WI-GT3: An alternative model from the same manufacturer with a different interface (I2C-compatible) and a smaller memory capacity of 2 kilobits.
3. AT24C16AN-10SU-2.7: A similar EEPROM chip from a different manufacturer, offering 16 kilobits of memory and operating at a lower voltage range.

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