ON Semiconductor
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DTA115EM3T5G
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DTA115EM3T5G

Product Overview

Category

The DTA115EM3T5G belongs to the category of discrete transistors.

Use

It is commonly used in electronic circuits for amplification and switching purposes.

Characteristics

  • Small form factor
  • High gain
  • Low power consumption
  • Fast switching speed

Package

The DTA115EM3T5G is typically available in a SOT-416 package.

Essence

This transistor is essential for designing compact and efficient electronic circuits.

Packaging/Quantity

It is usually supplied in reels containing a specific quantity, such as 3000 units per reel.

Specifications

  • Maximum Collector-Base Voltage: 50V
  • Maximum Collector Current: 100mA
  • Power Dissipation: 150mW
  • Transition Frequency: 250MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The DTA115EM3T5G has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High voltage gain
  • Low noise
  • Fast response time
  • Reliable performance over temperature variations

Advantages

  • Small footprint
  • Suitable for high-frequency applications
  • Low power consumption

Disadvantages

  • Limited maximum current and voltage ratings
  • Sensitive to electrostatic discharge (ESD)

Working Principles

The DTA115EM3T5G operates based on the principles of bipolar junction transistors, where the flow of current between the emitter and collector is controlled by the base current.

Detailed Application Field Plans

The DTA115EM3T5G is commonly used in: - Audio amplifiers - RF amplifiers - Switching circuits - Oscillator circuits

Detailed and Complete Alternative Models

Some alternative models to the DTA115EM3T5G include: - DTC115EM3T5G - DTA114EM3T5G - DTC114EM3T5G

In conclusion, the DTA115EM3T5G is a versatile and compact transistor that finds application in various electronic circuits, especially those requiring high gain and fast response times.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací DTA115EM3T5G v technických řešeních

  1. What is DTA115EM3T5G?

    • DTA115EM3T5G is a high-power, high-frequency transistor designed for use in RF and microwave applications.

  2. What are the key specifications of DTA115EM3T5G?

    • The DTA115EM3T5G features a frequency range of 1.8 GHz to 2.2 GHz, a power output of 15W, and a gain of 13 dB.

  3. What are the typical applications for DTA115EM3T5G?

    • This transistor is commonly used in wireless infrastructure, small cell, and other RF power amplifier applications.

  4. What are the thermal characteristics of DTA115EM3T5G?

    • The DTA115EM3T5G has a low thermal resistance and is designed to operate efficiently even under high-power conditions.

  5. What are the recommended operating conditions for DTA115EM3T5G?

    • It is recommended to operate this transistor within the specified frequency range and with appropriate biasing and matching circuits.

  6. Does DTA115EM3T5G require any special handling during assembly?

    • Proper ESD precautions should be taken during handling and assembly to prevent damage to the transistor.

  7. Can DTA115EM3T5G be used in both narrowband and broadband applications?

    • Yes, this transistor can be utilized in both narrowband and broadband RF systems.

  8. What are the typical performance characteristics of DTA115EM3T5G in terms of linearity and efficiency?

    • The DTA115EM3T5G exhibits good linearity and high efficiency, making it suitable for demanding RF power amplifier designs.

  9. Are there any known reliability issues with DTA115EM3T5G?

    • The DTA115EM3T5G is designed for high reliability and long-term performance in RF applications when operated within its specified parameters.

  10. Where can I find detailed application notes and reference designs for using DTA115EM3T5G in technical solutions?

    • Application notes and reference designs for DTA115EM3T5G can typically be found on the manufacturer's website or through authorized distributors.