DTC114TET1G
Product Category: Transistor
Basic Information Overview: - Category: NPN Bipolar Transistor - Use: Amplification and Switching - Characteristics: Small signal, low power, high voltage - Package: SOT-23 - Essence: Silicon - Packaging/Quantity: Tape & Reel, 3000 units per reel
Specifications: - Collector-Base Voltage (VCBO): 50V - Collector-Emitter Voltage (VCEO): 50V - Emitter-Base Voltage (VEBO): 5V - Collector Current (IC): 100mA - Power Dissipation (PD): 225mW - Transition Frequency (fT): 250MHz - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration:
E
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| C
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B
Functional Features: - High current gain - Low saturation voltage - Fast switching speed - Low noise
Advantages: - Small package size - Wide operating temperature range - High transition frequency
Disadvantages: - Limited collector current - Low power dissipation
Working Principles: The DTC114TET1G operates as a small signal NPN bipolar transistor. When a small current is applied to the base terminal, it allows a larger current to flow between the collector and emitter terminals, enabling amplification or switching of signals.
Detailed Application Field Plans: - Audio amplification circuits - Signal processing circuits - Switching circuits
Detailed and Complete Alternative Models: - BC547B - 2N3904 - 2
What is the DTC114TET1G?
What are the key features of the DTC114TET1G?
What are the typical applications of the DTC114TET1G?
What is the maximum collector current of the DTC114TET1G?
What is the voltage rating of the DTC114TET1G?
Is the DTC114TET1G suitable for surface mount technology (SMT) applications?
Does the DTC114TET1G require external biasing components?
What is the operating temperature range of the DTC114TET1G?
Can the DTC114TET1G be used in automotive electronics applications?
Where can I find detailed technical specifications and application notes for the DTC114TET1G?