ON Semiconductor
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FGB30N6S2T
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FGB30N6S2T

Introduction

The FGB30N6S2T is a power MOSFET belonging to the category of electronic components used in power management and control circuits. This device offers specific characteristics, packaging, and functional features that make it suitable for various applications.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Power management and control circuits
  • Characteristics: High voltage capability, low on-resistance, fast switching speed
  • Package: TO-263-3 (D2PAK)
  • Essence: Efficient power switching
  • Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications

  • Voltage Rating: 600V
  • Current Rating: 30A
  • On-Resistance: 0.09 Ohms
  • Gate Charge: 60nC
  • Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

The FGB30N6S2T follows the standard pin configuration for a TO-263-3 package: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications
  • Low on-resistance minimizes power losses and improves efficiency
  • Fast switching speed enables rapid response in power control circuits

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The FGB30N6S2T operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The FGB30N6S2T finds application in various power management and control systems, including: - Switching power supplies - Motor control - Inverters - LED lighting - Industrial automation

Detailed and Complete Alternative Models

  • FGB30N6S2
  • FGB30N6S2_F085
  • FGB30N6S2_F109

In conclusion, the FGB30N6S2T power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for diverse power management and control applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací FGB30N6S2T v technických řešeních

  1. What is the FGB30N6S2T?

    • The FGB30N6S2T is a 600V, 30A field stop IGBT (Insulated Gate Bipolar Transistor) designed for high power switching applications.

  2. What are the key features of the FGB30N6S2T?

    • The key features include low VCE(sat), fast switching speed, high input impedance, and ruggedness to handle high current and voltage.

  3. What are the typical applications of the FGB30N6S2T?

    • Typical applications include motor control, power supplies, UPS systems, solar inverters, and welding equipment.

  4. What is the maximum voltage and current rating of the FGB30N6S2T?

    • The FGB30N6S2T has a maximum voltage rating of 600V and a maximum current rating of 30A.

  5. What is the thermal resistance of the FGB30N6S2T?

    • The thermal resistance from junction to case (RthJC) is typically around 0.75°C/W.

  6. Does the FGB30N6S2T require a heat sink for operation?

    • Yes, due to its high power handling capability, it is recommended to use a heat sink to dissipate heat effectively.

  7. What is the gate threshold voltage of the FGB30N6S2T?

    • The gate threshold voltage typically ranges from 4V to 6V.

  8. Is the FGB30N6S2T suitable for high-frequency switching applications?

    • Yes, it is designed for high-speed switching applications with its fast turn-on and turn-off characteristics.

  9. What protection features does the FGB30N6S2T offer?

    • It offers built-in diode clamping and gate-emitter zener for overvoltage protection.

  10. Where can I find the detailed datasheet for the FGB30N6S2T?

    • The detailed datasheet can be found on the manufacturer's website or through authorized distributors.