ON Semiconductor
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FQP22N30
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FQP22N30

Product Overview

Category

The FQP22N30 belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification purposes.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The FQP22N30 is typically available in a TO-220 package.

Essence

This MOSFET is essential for power management and control in various electronic applications.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on supplier and customer requirements.

Specifications

  • Drain-Source Voltage (VDS): 300V
  • Continuous Drain Current (ID): 22A
  • On-Resistance (RDS(on)): 0.14Ω
  • Power Dissipation (PD): 150W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The FQP22N30 has a standard TO-220 pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid response in switching circuits.

Advantages

  • Suitable for high voltage applications
  • Low on-resistance reduces conduction losses
  • Fast switching speed enhances overall performance

Disadvantages

  • Higher gate capacitance compared to some alternative models
  • May require additional circuitry for driving the gate at higher frequencies

Working Principles

The FQP22N30 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the MOSFET conducts, allowing current to flow through it.

Detailed Application Field Plans

The FQP22N30 is widely used in the following applications: - Switching power supplies - Motor control - Inverters - Audio amplifiers - LED lighting

Detailed and Complete Alternative Models

Some alternative models to the FQP22N30 include: - IRFZ44N - STP55NF06L - IRLB8748

In conclusion, the FQP22N30 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management and control applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací FQP22N30 v technických řešeních

  1. What is the maximum drain-source voltage for FQP22N30?

    • The maximum drain-source voltage for FQP22N30 is 300V.

  2. What is the continuous drain current rating for FQP22N30?

    • The continuous drain current rating for FQP22N30 is 22A.

  3. What is the on-resistance of FQP22N30?

    • The on-resistance of FQP22N30 is typically 0.12 ohms.

  4. Can FQP22N30 be used in high-power applications?

    • Yes, FQP22N30 is suitable for high-power applications due to its high drain current and voltage ratings.

  5. What type of package does FQP22N30 come in?

    • FQP22N30 is available in a TO-220 package.

  6. Is FQP22N30 suitable for switching applications?

    • Yes, FQP22N30 is designed for use in switching applications.

  7. What is the typical gate charge of FQP22N30?

    • The typical gate charge of FQP22N30 is 40nC.

  8. Does FQP22N30 require a heat sink for thermal management?

    • Depending on the application and power dissipation, a heat sink may be required for proper thermal management when using FQP22N30.

  9. What are the recommended operating temperature range for FQP22N30?

    • The recommended operating temperature range for FQP22N30 is -55°C to 175°C.

  10. Can FQP22N30 be used in automotive applications?

    • Yes, FQP22N30 is suitable for use in automotive applications where its electrical characteristics meet the requirements.