ON Semiconductor
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HGTG12N60B3
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HGTG12N60B3

Product Overview

Category

The HGTG12N60B3 belongs to the category of power transistors.

Use

It is commonly used in electronic circuits for switching and amplification purposes.

Characteristics

  • High voltage capability
  • Low on-state resistance
  • Fast switching speed
  • High reliability

Package

The HGTG12N60B3 is typically available in a TO-247 package.

Essence

This power transistor is essential for controlling high-power applications in various electronic devices.

Packaging/Quantity

It is usually packaged individually and sold as single units.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 12A
  • Power Dissipation: 150W
  • Operating Temperature: -55°C to 150°C
  • Gate Charge: 50nC

Detailed Pin Configuration

The HGTG12N60B3 has a standard pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in high-power applications.
  • Low on-state resistance minimizes power loss and heat generation.
  • Fast switching speed enables efficient control of current flow.

Advantages

  • Suitable for high-power applications
  • Low power dissipation
  • Reliable performance

Disadvantages

  • Higher cost compared to lower-rated transistors
  • May require additional heat management due to high power dissipation

Working Principles

The HGTG12N60B3 operates based on the principles of field-effect transistors, where the gate voltage controls the current flow between the drain and source terminals.

Detailed Application Field Plans

The HGTG12N60B3 is widely used in the following applications: - Switching power supplies - Motor control systems - Inverters - Audio amplifiers - Lighting systems

Detailed and Complete Alternative Models

Some alternative models to the HGTG12N60B3 include: - IRF840 - FGA60N65SMD - STGW30NC60WD

In conclusion, the HGTG12N60B3 is a high-voltage power transistor with fast switching speed and low on-state resistance, making it suitable for various high-power electronic applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací HGTG12N60B3 v technických řešeních

  1. What is HGTG12N60B3?

    • HGTG12N60B3 is a 600V, 24A IGBT (Insulated Gate Bipolar Transistor) designed for high power switching applications.

  2. What are the key features of HGTG12N60B3?

    • The key features include low VCE(sat), fast switching speed, and high ruggedness, making it suitable for various technical solutions.

  3. What are the typical applications of HGTG12N60B3?

    • Typical applications include motor control, power supplies, inverters, and welding equipment.

  4. What is the maximum voltage and current rating of HGTG12N60B3?

    • HGTG12N60B3 has a maximum voltage rating of 600V and a maximum current rating of 24A.

  5. What is the thermal resistance of HGTG12N60B3?

    • The thermal resistance from junction to case (RthJC) is typically 0.75°C/W.

  6. Is HGTG12N60B3 suitable for high-frequency switching applications?

    • Yes, HGTG12N60B3 is designed for high-speed switching applications.

  7. Does HGTG12N60B3 require a gate driver circuit?

    • Yes, HGTG12N60B3 requires an external gate driver circuit for proper operation.

  8. What are the recommended operating conditions for HGTG12N60B3?

    • The recommended operating temperature range is -55°C to 150°C, and the gate-emitter voltage should not exceed ±20V.

  9. Can HGTG12N60B3 be used in parallel configurations for higher current handling?

    • Yes, HGTG12N60B3 can be used in parallel configurations to increase the overall current handling capability.

  10. Where can I find detailed application notes and reference designs for HGTG12N60B3?

    • Detailed application notes and reference designs can be found in the product datasheet and application notes provided by the manufacturer.