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HUF75333S3ST
Product Overview
Category
The HUF75333S3ST belongs to the category of power MOSFETs.
Use
It is commonly used in electronic circuits for switching and amplification applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The HUF75333S3ST is available in a TO-220 package.
Essence
This MOSFET is essential for efficient power management in various electronic devices and systems.
Packaging/Quantity
It is typically sold in reels or tubes, with quantities varying based on supplier and customer requirements.
Specifications
- Drain-Source Voltage (VDS): 55V
- Continuous Drain Current (ID): 75A
- RDS(ON) (Max) @ VGS = 10V: 5.5mΩ
- Gate-Source Voltage (VGS) ±20V
- Total Gate Charge (Qg): 70nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The HUF75333S3ST has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High current-carrying capability
- Low conduction losses
- Fast switching performance
- Robust and reliable operation
Advantages
- Suitable for high-power applications
- Efficient power management
- Low heat dissipation
- Enhanced system reliability
Disadvantages
- Higher cost compared to lower-rated MOSFETs
- Requires careful handling due to its high power capabilities
Working Principles
The HUF75333S3ST operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
- Power supplies
- Motor control
- Inverters
- Switched-mode power supplies
- Automotive systems
Detailed and Complete Alternative Models
- IRF3205
- FDP8870
- STP80NF55-06
In conclusion, the HUF75333S3ST power MOSFET offers high-performance characteristics suitable for a wide range of power management applications. Its robust design and efficient operation make it a preferred choice for demanding electronic systems.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací HUF75333S3ST v technických řešeních
What is the HUF75333S3ST?
- The HUF75333S3ST is a N-channel UltraFET® Power MOSFET designed for high-frequency power conversion applications.
What is the maximum drain-source voltage of the HUF75333S3ST?
- The maximum drain-source voltage of the HUF75333S3ST is 55V.
What is the continuous drain current rating of the HUF75333S3ST?
- The continuous drain current rating of the HUF75333S3ST is 75A.
What is the on-resistance of the HUF75333S3ST?
- The on-resistance of the HUF75333S3ST is typically 5.5mΩ at Vgs = 10V.
What are the typical applications for the HUF75333S3ST?
- The HUF75333S3ST is commonly used in high-frequency power conversion applications such as DC-DC converters, synchronous rectification, and motor control.
What is the gate-source voltage range for proper operation of the HUF75333S3ST?
- The gate-source voltage range for proper operation of the HUF75333S3ST is typically ±20V.
Does the HUF75333S3ST require a heat sink for operation?
- The need for a heat sink depends on the specific application and the power dissipation requirements. In high-power applications, a heat sink may be necessary.
Is the HUF75333S3ST suitable for automotive applications?
- Yes, the HUF75333S3ST is designed to meet the stringent requirements of automotive applications, including AEC-Q101 qualification.
What is the thermal resistance of the HUF75333S3ST?
- The thermal resistance of the HUF75333S3ST is typically 0.5°C/W junction-to-case.
Can the HUF75333S3ST be used in parallel to increase current handling capability?
- Yes, the HUF75333S3ST can be used in parallel to increase current handling capability, but proper attention should be given to current sharing and thermal management.