ON Semiconductor
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MJD6039T4G
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MJD6039T4G

Product Overview

The MJD6039T4G is a power transistor belonging to the category of NPN Bipolar Junction Transistors (BJTs). It is commonly used in electronic circuits for amplification and switching applications. The transistor exhibits high current and voltage capabilities, making it suitable for various power management tasks. The MJD6039T4G is characterized by its high current gain, low saturation voltage, and fast switching speed. It is typically available in a TO-252 package and is sold in quantities suitable for both individual and industrial use.

Specifications

  • Maximum Collector-Emitter Voltage: 100V
  • Maximum Collector Current: 8A
  • Power Dissipation: 2W
  • DC Current Gain (hFE): 40 to 250
  • Transition Frequency: 30MHz

Detailed Pin Configuration

The MJD6039T4G features a standard three-pin configuration: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High current gain for efficient amplification
  • Low saturation voltage for minimal power loss
  • Fast switching speed for rapid on/off transitions

Advantages and Disadvantages

Advantages

  • High current and voltage capabilities
  • Suitable for power management applications
  • Fast switching speed

Disadvantages

  • Moderate transition frequency compared to some alternative models
  • Limited power dissipation capability

Working Principles

The MJD6039T4G operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to amplify or switch electronic signals. When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals, enabling signal amplification or switching.

Detailed Application Field Plans

The MJD6039T4G is commonly used in the following applications: - Power supply units - Motor control circuits - Audio amplifiers - LED lighting systems

Detailed and Complete Alternative Models

Some alternative models to the MJD6039T4G include: - TIP31C - 2N3055 - BD139

In conclusion, the MJD6039T4G is a versatile power transistor with high current and voltage capabilities, making it suitable for various amplification and switching applications. Its characteristics, functional features, and application field plans make it a valuable component in electronic circuit design.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MJD6039T4G v technických řešeních

  1. What is MJD6039T4G?

    • MJD6039T4G is a NPN Darlington Power Transistor designed for high-voltage, high-speed, power switching applications.

  2. What are the key features of MJD6039T4G?

    • The key features include a high DC current gain, low collector-emitter saturation voltage, and a high transition frequency.

  3. What are the typical applications of MJD6039T4G?

    • Typical applications include relay drivers, high-side switches, and solenoid drivers in automotive, industrial, and consumer applications.

  4. What is the maximum collector current of MJD6039T4G?

    • The maximum collector current is 4A.

  5. What is the maximum collector-emitter voltage of MJD6039T4G?

    • The maximum collector-emitter voltage is 100V.

  6. What is the thermal resistance of MJD6039T4G?

    • The thermal resistance from junction to case is 3.13°C/W.

  7. What is the storage temperature range for MJD6039T4G?

    • The storage temperature range is -65°C to 150°C.

  8. What is the recommended operating temperature range for MJD6039T4G?

    • The recommended operating temperature range is -55°C to 150°C.

  9. Is MJD6039T4G RoHS compliant?

    • Yes, MJD6039T4G is RoHS compliant.

  10. What are the package options available for MJD6039T4G?

    • MJD6039T4G is available in a DPAK (TO-252) package.