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MMBFJ175LT1G

MMBFJ175LT1G

Introduction

The MMBFJ175LT1G is a field-effect transistor (FET) belonging to the category of small signal transistors. This device is commonly used in electronic circuits for amplification and switching applications due to its low power consumption and high input impedance.

Basic Information Overview

  • Category: Small Signal Transistor
  • Use: Amplification and Switching Applications
  • Characteristics: Low Power Consumption, High Input Impedance
  • Package: SOT-23
  • Essence: Field-Effect Transistor
  • Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Drain-Source Voltage (VDS): 25V
  • Gate-Source Voltage (VGS): ±8V
  • Continuous Drain Current (ID): 150mA
  • Total Power Dissipation (PD): 225mW
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The MMBFJ175LT1G features a standard SOT-23 package with three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • High Input Impedance
  • Low Power Consumption
  • Fast Switching Speed

Advantages and Disadvantages

Advantages

  • Low Power Consumption
  • High Input Impedance
  • Fast Switching Speed

Disadvantages

  • Limited Drain-Source Voltage
  • Moderate Continuous Drain Current

Working Principles

The MMBFJ175LT1G operates based on the principle of field-effect modulation, where the voltage applied to the gate terminal controls the conductivity between the source and drain terminals. When a voltage is applied to the gate, it creates an electric field that modulates the conductivity of the channel, allowing for amplification or switching of signals.

Detailed Application Field Plans

The MMBFJ175LT1G finds extensive use in various electronic applications, including: - Audio Amplifiers - Signal Processing Circuits - Oscillator Circuits - Switching Circuits

Detailed and Complete Alternative Models

Some alternative models to the MMBFJ175LT1G include: - 2N7002LT1G - BSS138LT1G - DMG2305UX-13

In conclusion, the MMBFJ175LT1G is a versatile small signal transistor with excellent characteristics for amplification and switching applications. Its low power consumption and high input impedance make it suitable for a wide range of electronic circuits.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MMBFJ175LT1G v technických řešeních

  1. What is MMBFJ175LT1G?

    • MMBFJ175LT1G is a JFET transistor designed for general-purpose amplifier and switching applications.
  2. What are the key features of MMBFJ175LT1G?

    • The key features include low on-state resistance, high forward transfer admittance, and low input capacitance.
  3. What are the typical applications of MMBFJ175LT1G?

    • Typical applications include audio amplifiers, signal processing circuits, and low-power switching circuits.
  4. What is the maximum drain-source voltage for MMBFJ175LT1G?

    • The maximum drain-source voltage is 25V.
  5. What is the maximum continuous drain current for MMBFJ175LT1G?

    • The maximum continuous drain current is 10mA.
  6. What is the operating temperature range for MMBFJ175LT1G?

    • The operating temperature range is -55°C to 150°C.
  7. What is the pin configuration of MMBFJ175LT1G?

    • MMBFJ175LT1G has three pins: gate (G), source (S), and drain (D).
  8. What are the recommended soldering conditions for MMBFJ175LT1G?

    • The recommended soldering conditions include a soldering iron temperature of 260°C for 10 seconds.
  9. What are the packaging options available for MMBFJ175LT1G?

    • MMBFJ175LT1G is available in SOT-23 surface-mount package.
  10. Where can I find the detailed datasheet for MMBFJ175LT1G?

    • The detailed datasheet for MMBFJ175LT1G can be found on the manufacturer's website or distributor's resources.