ON Semiconductor
Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
MMBFU310LT1G
Zobrazit detail DataSheets

MMBFU310LT1G

Product Overview

Category

The MMBFU310LT1G belongs to the category of field-effect transistors (FETs).

Use

It is commonly used as a switching device in electronic circuits.

Characteristics

  • Low on-resistance
  • High input impedance
  • Fast switching speed

Package

The MMBFU310LT1G is typically available in a SOT-23 package.

Essence

This FET is essential for controlling the flow of current in electronic devices.

Packaging/Quantity

It is usually packaged in reels with varying quantities, depending on the supplier.

Specifications

  • Drain-Source Voltage (VDS): 20V
  • Continuous Drain Current (ID): 0.3A
  • Total Power Dissipation: 225mW
  • Gate-Source Voltage (VGS): ±8V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The MMBFU310LT1G has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • Low power consumption
  • High efficiency
  • Small form factor

Advantages and Disadvantages

Advantages

  • Low on-resistance leads to minimal power loss
  • Fast switching speed enhances performance in high-frequency applications

Disadvantages

  • Limited maximum drain current compared to other FETs
  • Sensitivity to static electricity

Working Principles

The MMBFU310LT1G operates based on the principle of field-effect control, where the voltage applied to the gate terminal modulates the conductivity between the source and drain terminals.

Detailed Application Field Plans

The MMBFU310LT1G is widely used in various applications, including: - Switching power supplies - Battery management systems - LED lighting control - Portable electronics

Detailed and Complete Alternative Models

Some alternative models to the MMBFU310LT1G include: - 2N7002 - BSS138 - DMG2305UX

In conclusion, the MMBFU310LT1G is a versatile field-effect transistor with low on-resistance and fast switching speed, making it suitable for a wide range of electronic applications.

[Word count: 292]

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MMBFU310LT1G v technických řešeních

  1. What is MMBFU310LT1G?

    • MMBFU310LT1G is a NPN/PNP transistor array designed for general-purpose amplifier and switching applications.

  2. What are the key features of MMBFU310LT1G?

    • The key features include low VCE(sat) transistors, high current gain, and complementary NPN/PNP transistors in one package.

  3. What are the typical applications of MMBFU310LT1G?

    • Typical applications include audio amplifiers, signal processing circuits, and general-purpose switching circuits.

  4. What is the maximum collector current (IC) of MMBFU310LT1G?

    • The maximum collector current (IC) is 100mA per transistor.

  5. What is the maximum power dissipation of MMBFU310LT1G?

    • The maximum power dissipation is 225mW per transistor.

  6. What is the voltage rating of MMBFU310LT1G?

    • The voltage rating is 40V for both NPN and PNP transistors.

  7. What is the pin configuration of MMBFU310LT1G?

    • The pin configuration consists of three pins: base, emitter, and collector for both NPN and PNP transistors.

  8. Is MMBFU310LT1G suitable for high-frequency applications?

    • No, MMBFU310LT1G is not specifically designed for high-frequency applications.

  9. Can MMBFU310LT1G be used in audio amplifier circuits?

    • Yes, MMBFU310LT1G is commonly used in audio amplifier circuits due to its low VCE(sat) and high current gain characteristics.

  10. Where can I find detailed technical specifications for MMBFU310LT1G?

    • Detailed technical specifications can be found in the datasheet provided by the manufacturer or distributor of the component.