ON Semiconductor
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MMJT9435T3G
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MMJT9435T3G

Product Overview

Category: Transistor
Use: Power switching applications
Characteristics: High voltage, high speed, low on-resistance
Package: TO-252-3 (DPAK)
Essence: N-channel MOSFET
Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

  • Voltage Rating: 100V
  • Continuous Drain Current: 12A
  • RDS(ON): 40mΩ
  • Gate Threshold Voltage: 2.5V
  • Power Dissipation: 2.5W

Detailed Pin Configuration

  1. Gate (G)
  2. Drain (D)
  3. Source (S)

Functional Features

  • Fast switching speed
  • Low gate charge
  • Avalanche energy specified
  • Improved dv/dt capability

Advantages and Disadvantages

Advantages: - High voltage rating - Low on-resistance - Fast switching speed

Disadvantages: - Higher gate threshold voltage compared to some alternatives

Working Principles

The MMJT9435T3G operates as a power switch by controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal.

Detailed Application Field Plans

This transistor is suitable for use in various power switching applications such as motor control, DC-DC converters, and power management systems.

Detailed and Complete Alternative Models

  1. IRF540N
    • Voltage Rating: 100V
    • Continuous Drain Current: 33A
    • RDS(ON): 44mΩ
    • Package: TO-220
  2. FQP30N06L
    • Voltage Rating: 60V
    • Continuous Drain Current: 32A
    • RDS(ON): 35mΩ
    • Package: TO-220

In conclusion, the MMJT9435T3G is a high-voltage N-channel MOSFET designed for power switching applications. Its fast switching speed, low on-resistance, and high voltage rating make it suitable for various power management systems and motor control applications. However, its higher gate threshold voltage may be a consideration when compared to alternative models such as the IRF540N and FQP30N06L.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MMJT9435T3G v technických řešeních

  1. What is MMJT9435T3G?

    • MMJT9435T3G is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.

  2. What are the key features of MMJT9435T3G?

    • The key features include low saturation voltage, high current capability, and high hFE (DC current gain).

  3. What are the typical applications of MMJT9435T3G?

    • Typical applications include audio amplifiers, power management circuits, motor control, and LED lighting.

  4. What is the maximum collector current rating of MMJT9435T3G?

    • The maximum collector current rating is 6A.

  5. What is the maximum collector-emitter voltage rating of MMJT9435T3G?

    • The maximum collector-emitter voltage rating is 40V.

  6. What is the typical hFE (DC current gain) of MMJT9435T3G?

    • The typical hFE is 100-400 at a collector current of 1A.

  7. What is the thermal resistance of MMJT9435T3G?

    • The thermal resistance from junction to case is 4.0°C/W.

  8. Is MMJT9435T3G suitable for high-frequency applications?

    • No, it is not recommended for high-frequency applications due to its transition frequency of 30MHz.

  9. Can MMJT9435T3G be used in automotive applications?

    • Yes, it is suitable for automotive applications such as power distribution and motor control.

  10. Are there any specific layout considerations for using MMJT9435T3G?

    • It is important to minimize lead lengths and keep the device close to the heat sink to ensure proper thermal management.