MMUN2113LT1

Product Overview

Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: Small signal NPN transistor, low voltage, high current capability
Package: SOT-23
Essence: A versatile and efficient transistor for various electronic applications
Packaging/Quantity: Typically available in reels of 3000 units

Specifications

• Type: NPN
• Voltage: 50V
• Current: 600mA
• Power Dissipation: 330mW
• Gain (hfe): 100 to 300
• Frequency: 300MHz

Detailed Pin Configuration

1. Base (B)
2. Emitter (E)
3. Collector (C)

Functional Features

• High current gain
• Low saturation voltage
• Fast switching speed
• Small package size

Advantages

• Versatile usage in various electronic circuits
• Small form factor
• High current capability

Disadvantages

• Limited voltage and power handling capacity
• Susceptible to thermal runaway if not properly managed

Working Principles

MMUN2113LT1 operates based on the principles of bipolar junction transistors, where the flow of current is controlled by the application of a small input signal at the base terminal, resulting in amplified output current between the collector and emitter terminals.

Detailed Application Field Plans

• Audio amplification circuits
• Switching circuits in electronic devices
• Signal amplification in sensor interfaces
• Oscillator circuits

Detailed and Complete Alternative Models

1. BC547
2. 2N2222
3. 2N3904
4. BC548

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This content provides a comprehensive overview of the MMUN2113LT1 transistor, covering its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models. If you need further details or additional information, feel free to ask!