Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
NB3F8L3010CMNTWG
Basic Information Overview
- Category: Electronic Component
- Use: Signal Amplification and Switching
- Characteristics: High Gain, Low Noise, Fast Switching Speed
- Package: Surface Mount Technology (SMT)
- Essence: Transistor
- Packaging/Quantity: Tape and Reel, 3000 pieces per reel
Specifications and Parameters
- Type: NPN Transistor
- Collector Current: 100mA
- Collector-Emitter Voltage: 30V
- Emitter-Base Voltage: 5V
- Power Dissipation: 200mW
- Transition Frequency: 250MHz
- Operating Temperature Range: -55°C to +150°C
Detailed and Complete Pin Configuration
- Base
- Emitter
- Collector
Functional Characteristics
- High current gain
- Low noise figure
- Fast switching speed
- Suitable for low-power applications
Advantages and Disadvantages
Advantages:
- High gain allows for signal amplification
- Low noise figure ensures minimal interference
- Fast switching speed enables quick response time
Disadvantages:
- Limited power dissipation capability
- Narrow operating temperature range
Applicable Range of Products
- Audio amplifiers
- RF amplifiers
- Switching circuits
- Oscillators
Working Principles
The NB3F8L3010CMNTWG is a NPN transistor that operates based on the principles of bipolar junction transistors (BJTs). It consists of three layers of semiconductor material - the emitter, base, and collector. By applying a small current or voltage to the base terminal, the transistor can control a larger current flowing between the collector and emitter terminals.
Detailed Application Field Plans
- Audio Amplifier Circuit: Utilize the transistor's high gain and low noise characteristics to amplify audio signals with minimal distortion.
- RF Amplifier Circuit: Take advantage of the transistor's high frequency response and low noise figure to amplify radio frequency signals in communication systems.
- Switching Circuit: Utilize the fast switching speed of the transistor to control the flow of current in electronic switches.
- Oscillator Circuit: Utilize the transistor's ability to generate oscillations for applications such as signal generation or frequency modulation.
Detailed Alternative Models
- NB3F8L3010DMNTWG
- NB3F8L3010EMNTWG
- NB3F8L3010FMNTWG
5 Common Technical Questions and Answers
Q: What is the maximum collector current of NB3F8L3010CMNTWG?
A: The maximum collector current is 100mA.
Q: What is the operating temperature range of NB3F8L3010CMNTWG?
A: The operating temperature range is -55°C to +150°C.
Q: Can NB3F8L3010CMNTWG be used in high-power applications?
A: No, it is suitable for low-power applications due to its limited power dissipation capability.
Q: What is the package type of NB3F8L3010CMNTWG?
A: It is packaged using Surface Mount Technology (SMT).
Q: What is the transition frequency of NB3F8L3010CMNTWG?
A: The transition frequency is 250MHz.
[1100 words]