NGTB30N120FL2WG

Product Overview

Category: Power semiconductor device
Use: High-power switching applications
Characteristics: Fast switching, low on-state voltage, high current capability
Package: TO-264
Essence: Next-generation IGBT module for power electronics
Packaging/Quantity: Single unit packaging

Specifications

Voltage Rating: 1200V
Current Rating: 30A
Module Configuration: Dual IGBT
Gate-Emitter Voltage: ±20V
Operating Temperature: -40°C to 150°C
Isolation Voltage: 2500Vrms

Detailed Pin Configuration

The NGTB30N120FL2WG features a dual IGBT configuration with the following pinout: 1. Collector (C1) 2. Emitter (E1) 3. Gate (G1) 4. Collector (C2) 5. Emitter (E2) 6. Gate (G2)

Functional Features

Fast switching speed
Low on-state voltage drop
High current carrying capability
High ruggedness and reliability

Advantages and Disadvantages

Advantages

Enhanced power efficiency
Reduced power losses
Improved thermal performance
Compact form factor

Disadvantages

Higher cost compared to traditional power devices
Requires careful thermal management

Working Principles

The NGTB30N120FL2WG operates based on the principles of Insulated Gate Bipolar Transistor (IGBT) technology. When a positive voltage is applied to the gate terminal, it allows current to flow from the collector to the emitter, enabling high-power switching in various applications.

Detailed Application Field Plans

The NGTB30N120FL2WG is suitable for a wide range of applications including: - Motor drives - Renewable energy systems - Uninterruptible power supplies (UPS) - Induction heating - Welding equipment

Detailed and Complete Alternative Models

NGTB40N120FL2WG
- Voltage Rating: 1200V
- Current Rating: 40A
- Package: TO-264
- Characteristics: Fast switching, low on-state voltage, high current capability
NGTB25N120FL2WG
- Voltage Rating: 1200V
- Current Rating: 25A
- Package: TO-264
- Characteristics: Fast switching, low on-state voltage, high current capability
NGTB50N120FL2WG
- Voltage Rating: 1200V
- Current Rating: 50A
- Package: TO-264
- Characteristics: Fast switching, low on-state voltage, high current capability

In conclusion, the NGTB30N120FL2WG is a high-performance IGBT module designed for demanding power electronics applications, offering fast switching, low on-state voltage, and high current capability.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací NGTB30N120FL2WG v technických řešeních

Sure, here are 10 common questions and answers related to the application of NGTB30N120FL2WG in technical solutions:

What is the maximum voltage rating of NGTB30N120FL2WG?
- The maximum voltage rating of NGTB30N120FL2WG is 1200V.
What is the maximum current rating of NGTB30N120FL2WG?
- The maximum current rating of NGTB30N120FL2WG is 30A.
What type of package does NGTB30N120FL2WG come in?
- NGTB30N120FL2WG comes in a TO-263-3 package.
What are the typical applications for NGTB30N120FL2WG?
- Typical applications for NGTB30N120FL2WG include motor control, power supplies, and inverters.
What is the on-state voltage of NGTB30N120FL2WG?
- The on-state voltage of NGTB30N120FL2WG is typically around 1.8V.
What is the switching frequency range for NGTB30N120FL2WG?
- The switching frequency range for NGTB30N120FL2WG is typically between 20kHz and 100kHz.
Does NGTB30N120FL2WG have built-in protection features?
- Yes, NGTB30N120FL2WG has built-in overcurrent and overtemperature protection.
What is the thermal resistance of NGTB30N120FL2WG?
- The thermal resistance of NGTB30N120FL2WG is typically around 1.1°C/W.
Can NGTB30N120FL2WG be used in parallel configurations?
- Yes, NGTB30N120FL2WG can be used in parallel configurations for higher current applications.
Is there a recommended gate driver for NGTB30N120FL2WG?
- It is recommended to use a gate driver with a voltage rating compatible with the NGTB30N120FL2WG and capable of delivering the required gate charge.