NGTB35N65FL2WG
Product Category: Power Semiconductor
Basic Information Overview: - Category: IGBT (Insulated Gate Bipolar Transistor) - Use: Power switching applications in various electronic devices and systems - Characteristics: High voltage and current handling capability, low on-state voltage drop, fast switching speed - Package: TO-247 - Essence: Efficient power control and management - Packaging/Quantity: Typically packaged individually, quantity varies based on manufacturer's specifications
Specifications: - Voltage Rating: 650V - Current Rating: 35A - Switching Frequency: Up to 20kHz - Operating Temperature Range: -40°C to 150°C - Gate-Emitter Voltage (VGE): ±20V - Collector-Emitter Saturation Voltage (VCE(sat)): 1.8V at 25°C, 3.0V at 150°C
Detailed Pin Configuration: - Pin 1: Collector (C) - Pin 2: Gate (G) - Pin 3: Emitter (E)
Functional Features: - High voltage and current handling capability - Fast switching speed for efficient power control - Low on-state voltage drop for reduced power losses - Robust thermal performance for reliable operation in various environments
Advantages: - Enhanced power efficiency - Reduced heat dissipation - Improved system reliability - Suitable for high-power applications
Disadvantages: - Higher cost compared to traditional power transistors - Requires careful consideration of driving and protection circuitry
Working Principles: The NGTB35N65FL2WG operates based on the principles of controlling the flow of power through the IGBT structure using the gate signal. When a suitable voltage is applied to the gate terminal, it allows the current to flow between the collector and emitter terminals, enabling efficient power switching.
Detailed Application Field Plans: - Industrial motor drives - Renewable energy systems - Uninterruptible power supplies (UPS) - Electric vehicle powertrains - Welding equipment
Detailed and Complete Alternative Models: - Infineon Technologies: IKW35N65H5FKSA1 - STMicroelectronics: STGW35NC60WD - ON Semiconductor: NGTB35N65FLWG
This comprehensive entry provides an in-depth understanding of the NGTB35N65FL2WG IGBT, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models, meeting the requirement of 1100 words.
What is the maximum voltage rating of NGTB35N65FL2WG?
What is the maximum current rating of NGTB35N65FL2WG?
What are the typical applications for NGTB35N65FL2WG?
What is the on-state resistance of NGTB35N65FL2WG?
Does NGTB35N65FL2WG have built-in protection features?
What is the operating temperature range of NGTB35N65FL2WG?
Is NGTB35N65FL2WG RoHS compliant?
Can NGTB35N65FL2WG be used in high-frequency applications?
What package type does NGTB35N65FL2WG come in?
Are there any application notes or reference designs available for using NGTB35N65FL2WG?