ON Semiconductor
Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
NJD35N04T4G
Zobrazit detail DataSheets

NJD35N04T4G

Product Overview

Category

The NJD35N04T4G belongs to the category of power MOSFETs.

Use

It is used as a switching device in various electronic circuits and applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The NJD35N04T4G is typically available in a TO-252 package.

Essence

This MOSFET is essential for controlling power flow in electronic devices and systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 35A
  • RDS(ON) (Max) @ VGS = 10V: 9.5mΩ
  • Gate-Source Voltage (VGS) (Max): ±20V
  • Total Gate Charge (Qg): 22nC

Detailed Pin Configuration

The NJD35N04T4G typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High current-carrying capability
  • Low conduction losses
  • Fast switching characteristics

Advantages

  • Efficient power management
  • Suitable for high-frequency applications
  • Low heat dissipation

Disadvantages

  • Sensitivity to static electricity
  • Gate drive requirements for optimal performance

Working Principles

The NJD35N04T4G operates based on the principles of field-effect transistors, where the control of current flow between the drain and source terminals is achieved through the application of a voltage at the gate terminal.

Detailed Application Field Plans

The NJD35N04T4G is widely used in: - Switching power supplies - Motor control circuits - LED lighting systems - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the NJD35N04T4G include: - IRF3205 - FDP8870 - STP55NF06L

In conclusion, the NJD35N04T4G power MOSFET offers high-performance characteristics suitable for a wide range of electronic applications, providing efficient power management and fast switching capabilities.

[Word Count: 298]

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací NJD35N04T4G v technických řešeních

  1. What is NJD35N04T4G?

    • NJD35N04T4G is a N-channel Power MOSFET designed for high-speed switching applications.

  2. What are the key features of NJD35N04T4G?

    • The key features include low on-resistance, fast switching speed, low gate charge, and high ruggedness.

  3. What are the typical applications of NJD35N04T4G?

    • Typical applications include power supplies, DC-DC converters, motor control, and battery management systems.

  4. What is the maximum drain-source voltage rating for NJD35N04T4G?

    • The maximum drain-source voltage rating is typically 40V.

  5. What is the maximum continuous drain current for NJD35N04T4G?

    • The maximum continuous drain current is typically 35A.

  6. What is the gate-source voltage range for NJD35N04T4G?

    • The gate-source voltage range is typically ±20V.

  7. What is the typical on-resistance of NJD35N04T4G?

    • The typical on-resistance is around 8.5mΩ.

  8. Does NJD35N04T4G require a heat sink in high-power applications?

    • Yes, in high-power applications, it is recommended to use a heat sink to dissipate heat effectively.

  9. Can NJD35N04T4G be used in automotive applications?

    • Yes, NJD35N04T4G is suitable for automotive applications due to its high ruggedness and reliability.

  10. Is NJD35N04T4G RoHS compliant?

    • Yes, NJD35N04T4G is RoHS compliant, making it suitable for environmentally friendly designs.