NTD80N02G

Product Overview

Use

It is commonly used in electronic circuits for switching and amplification purposes.

Characteristics

High voltage capability
Low on-resistance
Fast switching speed
Low gate charge

Package

The NTD80N02G is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management in various electronic applications.

Packaging/Quantity

It is usually packaged in reels with a quantity of 2500 units per reel.

Specifications

Drain-Source Voltage (VDS): 24V
Continuous Drain Current (ID): 80A
On-Resistance (RDS(on)): 8.5mΩ
Gate-Source Voltage (VGS): ±20V
Total Gate Charge (Qg): 38nC
Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The NTD80N02G has a standard pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

High current-carrying capability
Low conduction losses
Fast switching characteristics
Suitable for high-frequency applications

Advantages

Efficient power handling
Reduced heat dissipation
Enhanced system reliability
Suitable for high-power applications

Disadvantages

Sensitivity to static electricity
Gate drive considerations required for optimal performance

Working Principles

The NTD80N02G operates based on the principles of field-effect transistors, where the control of current flow between the drain and source terminals is achieved through the application of a voltage at the gate terminal.

Detailed Application Field Plans

The NTD80N02G is widely used in: - Switch-mode power supplies - Motor control systems - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the NTD80N02G include: - IRF1405 - FDP8878 - STP80NF03L

In conclusion, the NTD80N02G power MOSFET offers high-performance characteristics suitable for a wide range of electronic applications, particularly those requiring efficient power management and high current-handling capabilities.

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