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SMBT3946DW1T1G
Product Overview
Category
The SMBT3946DW1T1G belongs to the category of small signal transistors.
Use
It is commonly used in low-power amplification and switching applications.
Characteristics
- Small form factor
- Low power consumption
- High gain
- Fast switching speed
Package
The SMBT3946DW1T1G is available in a SOT-363 package.
Essence
This transistor is essential for amplifying and switching small electrical signals in electronic circuits.
Packaging/Quantity
The SMBT3946DW1T1G is typically packaged in reels containing a specific quantity, such as 3000 units per reel.
Specifications
- Collector-Base Voltage (VCBO): 60V
- Collector-Emitter Voltage (VCEO): 40V
- Emitter-Base Voltage (VEBO): 6V
- Continuous Collector Current (IC): 200mA
- Total Power Dissipation (PTOT): 225mW
- Transition Frequency (fT): 250MHz
Detailed Pin Configuration
The SMBT3946DW1T1G has the following pin configuration: 1. Base (B) 2. Emitter (E) 3. Collector (C)
Functional Features
- High voltage capability
- Low saturation voltage
- Excellent hFE linearity
Advantages
- Small footprint
- Versatile application range
- Reliable performance
Disadvantages
- Limited power handling capacity
- Sensitive to overvoltage conditions
Working Principles
The SMBT3946DW1T1G operates based on the principles of bipolar junction transistors, where the flow of current between its terminals is controlled by the voltage applied to the base terminal.
Detailed Application Field Plans
The SMBT3946DW1T1G is widely used in: - Audio amplifiers - Signal processing circuits - Switching regulators - Oscillator circuits
Detailed and Complete Alternative Models
Some alternative models to the SMBT3946DW1T1G include: - 2N3904 - BC547 - 2SC945 - PN2222A
In conclusion, the SMBT3946DW1T1G is a versatile small signal transistor with a compact design and reliable performance, making it suitable for various low-power electronic applications.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SMBT3946DW1T1G v technických řešeních
What is the SMBT3946DW1T1G?
- The SMBT3946DW1T1G is a high-performance NPN bipolar transistor designed for general-purpose amplifier and switching applications.
What are the key features of the SMBT3946DW1T1G?
- The key features include a high current gain, low saturation voltage, and high transition frequency, making it suitable for various technical solutions.
What are the typical applications of the SMBT3946DW1T1G?
- Typical applications include audio amplification, signal processing, motor control, and general switching functions in electronic circuits.
What is the maximum collector current rating of the SMBT3946DW1T1G?
- The maximum collector current rating is 100mA, which makes it suitable for low to moderate power applications.
What is the maximum power dissipation of the SMBT3946DW1T1G?
- The maximum power dissipation is 225mW, allowing it to handle moderate power levels without overheating.
Does the SMBT3946DW1T1G have a low noise figure?
- Yes, the SMBT3946DW1T1G exhibits low noise characteristics, making it suitable for low-noise amplifier applications.
Is the SMBT3946DW1T1G suitable for high-frequency applications?
- Yes, with a high transition frequency (fT), the SMBT3946DW1T1G is well-suited for high-frequency applications such as RF amplification.
What are the recommended operating conditions for the SMBT3946DW1T1G?
- The recommended operating conditions include a collector-emitter voltage (VCE) of up to 40V and a base current (IB) within the specified range for optimal performance.
Can the SMBT3946DW1T1G be used in temperature-sensitive environments?
- Yes, the SMBT3946DW1T1G has a wide operating temperature range, making it suitable for diverse environmental conditions.
Are there any specific layout considerations when using the SMBT3946DW1T1G in a circuit?
- It is important to minimize lead lengths and ensure proper heat sinking to optimize the performance and reliability of the SMBT3946DW1T1G in a circuit.