SZNUP3105LT1G
Product Category: Power MOSFET
Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplification in power electronics applications - Characteristics: Low on-state resistance, high switching speed, low gate charge - Package: SOT-23 - Essence: N-channel enhancement mode MOSFET - Packaging/Quantity: Tape and reel, 3000 units per reel
Specifications: - Voltage Rating: 20V - Continuous Drain Current: 3.7A - RDS(ON): 35mΩ at VGS = 4.5V - Gate Threshold Voltage: 1V to 2.5V - Total Gate Charge: 6.5nC - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain
Functional Features: - Fast switching speed for efficient power conversion - Low on-state resistance minimizes conduction losses - Enhanced thermal performance for improved reliability
Advantages: - High efficiency in power conversion applications - Compact SOT-23 package for space-constrained designs - Suitable for battery-powered devices due to low gate charge
Disadvantages: - Limited voltage rating compared to some other power MOSFETs - Sensitivity to static discharge due to small package size
Working Principles: The SZNUP3105LT1G operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the channel between the source and drain terminals.
Detailed Application Field Plans: - DC-DC converters - Load switches - Battery management systems - LED lighting - Portable electronic devices
Detailed and Complete Alternative Models: - IRF7319 (20V, 4.3A, 25mΩ) - BSS138 (50V, 220mA, 1.5Ω)
This completes the English editing encyclopedia entry structure for the SZNUP3105LT1G power MOSFET.
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