2SB11560P

Product Overview

Category:

The 2SB11560P belongs to the category of semiconductor devices, specifically a PNP epitaxial planar silicon transistor.

Use:

This transistor is commonly used in electronic circuits for amplification and switching purposes.

Characteristics:

High voltage capability
Low collector saturation voltage
Complementary to 2SD1685P

Package:

The 2SB11560P is typically available in a TO-220F package.

Essence:

The essence of the 2SB11560P lies in its ability to amplify and switch electronic signals with high voltage capabilities.

Packaging/Quantity:

The 2SB11560P is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

Collector-Base Voltage: 120V
Collector Current: 8A
Total Power Dissipation: 25W
Transition Frequency: 30MHz
Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

Emitter
Base
Collector

Functional Features

High voltage capability allows for versatile use in various electronic applications.
Low collector saturation voltage ensures efficient switching performance.

Advantages

High voltage capability makes it suitable for diverse circuit designs.
Low collector saturation voltage enhances energy efficiency.

Disadvantages

Limited frequency response compared to some other transistors.
May require heat sinking in high-power applications.

Working Principles

The 2SB11560P operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.

Detailed Application Field Plans

The 2SB11560P finds application in: - Audio amplifiers - Power supply circuits - Motor control systems - Switching regulators

Detailed and Complete Alternative Models

2SB1560
2SB1756
2SB772

In conclusion, the 2SB11560P is a versatile PNP transistor with high voltage capability and low collector saturation voltage, making it suitable for a wide range of electronic applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 2SB11560P v technických řešeních

What is the maximum collector current of 2SB11560P?
- The maximum collector current of 2SB11560P is 3A.
What is the typical collector-emitter saturation voltage of 2SB11560P?
- The typical collector-emitter saturation voltage of 2SB11560P is 0.5V.
What is the power dissipation of 2SB11560P?
- The power dissipation of 2SB11560P is 1W.
What are the typical applications for 2SB11560P?
- 2SB11560P is commonly used in audio amplification and general purpose switching applications.
What is the maximum Vce voltage for 2SB11560P?
- The maximum Vce voltage for 2SB11560P is 50V.
Is 2SB11560P suitable for use in low-power voltage regulator circuits?
- Yes, 2SB11560P can be used in low-power voltage regulator circuits due to its characteristics.
Does 2SB11560P require a heat sink for normal operation?
- It is recommended to use a heat sink when operating 2SB11560P near its maximum power dissipation to ensure proper thermal management.
Can 2SB11560P be used in high-frequency applications?
- While 2SB11560P is not specifically designed for high-frequency applications, it can be used in moderate frequency ranges with appropriate circuit design.
What are the typical operating temperature ranges for 2SB11560P?
- The typical operating temperature range for 2SB11560P is -55°C to 150°C.
Is 2SB11560P suitable for automotive electronic applications?
- Yes, 2SB11560P can be used in automotive electronic applications where its specifications meet the requirements of the specific application.