Panasonic Electronic Components
Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
UNR311100L
Zobrazit detail DataSheets

UNR311100L

Product Overview

Belongs to: Semiconductor Devices
Category: Transistor
Use: Amplification and Switching
Characteristics: High voltage, high speed, low saturation voltage
Package: TO-220F
Essence: NPN Silicon Epitaxial Planar Transistor
Packaging/Quantity: Bulk packaging, quantity varies

Specifications

  • Voltage: 400V
  • Current: 10A
  • Power Dissipation: 50W
  • Transition Frequency: 30MHz
  • Operating Temperature: -55°C to +150°C

Detailed Pin Configuration

  1. Emitter (E)
  2. Collector (C)
  3. Base (B)

Functional Features

  • High voltage capability
  • Fast switching speed
  • Low collector-emitter saturation voltage

Advantages

  • Suitable for high power applications
  • Reliable and durable
  • Wide operating temperature range

Disadvantages

  • Larger package size compared to SMD transistors
  • Higher cost compared to standard transistors

Working Principles

The UNR311100L operates as a bipolar junction transistor (BJT) in the NPN configuration. When a small current flows into the base (B), it controls a larger current between the collector (C) and emitter (E), allowing for amplification or switching of electrical signals.

Detailed Application Field Plans

  • Power supply units
  • Motor control circuits
  • Audio amplifiers
  • Electronic ballasts

Detailed and Complete Alternative Models

  • UNR311200L
  • UNR311300L
  • UNR311500L

Note: The above alternative models have similar specifications and characteristics, providing flexibility in design and application.

This comprehensive entry provides an in-depth understanding of the UNR311100L transistor, including its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací UNR311100L v technických řešeních

  1. What is UNR311100L?

    • UNR311100L is a high-power NPN silicon transistor commonly used in technical solutions for amplification and switching applications.

  2. What are the key specifications of UNR311100L?

    • The key specifications include a maximum collector current of 3A, a collector-emitter voltage of 50V, and a power dissipation of 10W.

  3. How is UNR311100L typically used in technical solutions?

    • UNR311100L is often used in audio amplifiers, power supply circuits, motor control, and other applications requiring high-current switching.

  4. What are the important considerations when designing with UNR311100L?

    • Designers should pay attention to heat dissipation, proper biasing, and ensuring that the maximum ratings are not exceeded to ensure reliable operation.

  5. Can UNR311100L be used in high-frequency applications?

    • No, UNR311100L is not suitable for high-frequency applications due to its limited frequency response.

  6. What are some common alternatives to UNR311100L?

    • Common alternatives include similar NPN transistors such as 2N3055, TIP31, and MJ15003.

  7. Is UNR311100L suitable for automotive applications?

    • Yes, UNR311100L can be used in automotive applications where its specifications meet the requirements.

  8. What are the typical operating conditions for UNR311100L?

    • The typical operating conditions include a collector current of 1-3A, a collector-emitter voltage of 20-50V, and a maximum junction temperature of 150°C.

  9. Are there any specific layout considerations for using UNR311100L in PCB designs?

    • It's important to provide adequate thermal relief and heatsinking for UNR311100L to dissipate heat effectively.

  10. Where can I find the detailed datasheet for UNR311100L?

    • The datasheet for UNR311100L can be found on the manufacturer's website or through authorized distributors.