R1LP5256ESA-5SI#B0

Product Overview

Category

R1LP5256ESA-5SI#B0 belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

R1LP5256ESA-5SI#B0 is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

R1LP5256ESA-5SI#B0 is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 32,768 words x 8 bits
• Operating Voltage: 3.3V
• Access Time: 55 ns
• Standby Current: 10 μA (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of R1LP5256ESA-5SI#B0 is as follows:

1. Vcc (Power Supply)
2. WE (Write Enable)
3. OE (Output Enable)
4. A0-A14 (Address Inputs)
5. DQ0-DQ7 (Data Inputs/Outputs)
6. CE1, CE2 (Chip Enables)
7. UB, LB (Upper Byte/Lower Byte Enables)
8. GND (Ground)

Functional Features

• Random access to any memory location
• Simultaneous read and write operations
• Easy interfacing with microcontrollers and other digital devices
• Low power consumption in standby mode
• High-speed operation for efficient data transfer

Advantages and Disadvantages

Advantages

• Fast access time allows for quick data retrieval
• Large storage capacity accommodates a wide range of applications
• Low power consumption helps prolong battery life in portable devices
• Compact package size enables integration into space-constrained designs
• Reliable performance ensures data integrity and system stability

Disadvantages

• Relatively higher cost compared to other memory technologies
• Volatile memory requires constant power supply to retain data
• Limited endurance compared to non-volatile memory types

Working Principles

R1LP5256ESA-5SI#B0 operates based on the principles of static random access memory (SRAM). It utilizes flip-flop circuits to store each bit of data as long as power is supplied. The stored data can be accessed randomly, allowing for fast read and write operations.

Detailed Application Field Plans

R1LP5256ESA-5SI#B0 finds applications in various fields, including: - Computer systems - Networking equipment - Communication devices - Industrial automation - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to R1LP5256ESA-5SI#B0 include: - R1LV5256ESA-5SI#B0 - R1LP5256ESA-5SI#A0 - R1LP5256ESA-5SI#C0 - R1LP5256ESA-5SI#D0

These alternative models may have slight variations in specifications or features but serve the same purpose of providing high-speed, reliable data storage.

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