R1LV0108ESA-5SI#B0

Product Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-speed operation - Low power consumption - Small package size - Wide operating temperature range

Package: SOP (Small Outline Package)

Essence: The R1LV0108ESA-5SI#B0 is a memory IC that offers high-speed operation and low power consumption, making it suitable for various applications.

Packaging/Quantity: The R1LV0108ESA-5SI#B0 is typically packaged in reels or trays. The quantity per package may vary depending on the supplier.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 128K words × 8 bits
• Operating Voltage: 3.3V
• Access Time: 55 ns
• Standby Current: 10 μA (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The R1LV0108ESA-5SI#B0 has a total of 28 pins. The pin configuration is as follows:

Pin 1: Vcc Pin 2: A12 Pin 3: A7 Pin 4: A6 Pin 5: A5 Pin 6: A4 Pin 7: A3 Pin 8: A2 Pin 9: A1 Pin 10: A0 Pin 11: DQ0 Pin 12: DQ1 Pin 13: DQ2 Pin 14: DQ3 Pin 15: DQ4 Pin 16: DQ5 Pin 17: DQ6 Pin 18: DQ7 Pin 19: GND Pin 20: WE# Pin 21: OE# Pin 22: CE# Pin 23: UB# Pin 24: LB# Pin 25: A8 Pin 26: A9 Pin 27: A11 Pin 28: A10

Functional Features

• High-speed operation allows for quick data access.
• Low power consumption helps conserve energy.
• Small package size enables space-efficient designs.
• Wide operating temperature range ensures reliable performance in various environments.

Advantages and Disadvantages

Advantages: - High-speed operation improves overall system performance. - Low power consumption prolongs battery life in portable devices. - Small package size saves board space. - Wide operating temperature range enhances versatility.

Disadvantages: - Limited memory capacity compared to other memory technologies. - Relatively higher cost per bit compared to some alternative memory options.

Working Principles

The R1LV0108ESA-5SI#B0 is a static random access memory (SRAM) device. It stores data using flip-flops, which retain information as long as power is supplied. The memory cells are organized into 128K words, with each word consisting of 8 bits. The device operates at a voltage of 3.3V and offers fast access times.

Detailed Application Field Plans

The R1LV0108ESA-5SI#B0 can be used in various applications that require high-speed and low-power memory, such as: - Embedded systems - Networking equipment - Industrial automation - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to the R1LV0108ESA-5SI#B0 include: - R1LV0108ESA-7SI#B0: Similar specifications but with a slower access time of 70 ns. - R1LV0108ESA-3SI#B0: Similar specifications but with a faster access time of 35 ns. - R1LV0108ESA-5SI#B1: Similar specifications but with different packaging options.

These alternative models offer flexibility in terms of access time, allowing users to choose the most suitable option for their specific requirements.

Word count: 443 words