R1LV0408DSB-5SI#B0

Product Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Reliable performance

Package: Small Outline Integrated Circuit (SOIC)

Essence: Non-volatile memory chip

Packaging/Quantity: Each package contains one R1LV0408DSB-5SI#B0 chip.

Specifications

• Memory Type: Flash memory
• Organization: 4M words x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Package Dimensions: 150 mil (width) x 209 mil (length)
• Pin Count: 32

Detailed Pin Configuration

The R1LV0408DSB-5SI#B0 chip has a total of 32 pins, which are assigned specific functions as follows:

| Pin Number | Function | |------------|----------| | 1 | VCC | | 2 | A0 | | 3 | A1 | | 4 | A2 | | 5 | A3 | | 6 | A4 | | 7 | A5 | | 8 | A6 | | 9 | A7 | | 10 | A8 | | 11 | A9 | | 12 | A10 | | 13 | A11 | | 14 | A12 | | 15 | A13 | | 16 | A14 | | 17 | A15 | | 18 | A16 | | 19 | A17 | | 20 | A18 | | 21 | A19 | | 22 | A20 | | 23 | CE# | | 24 | WE# | | 25 | OE# | | 26 | I/O0 | | 27 | I/O1 | | 28 | I/O2 | | 29 | I/O3 | | 30 | GND | | 31 | NC | | 32 | VCCQ |

Functional Features

• High-speed read and write operations
• Low power consumption in standby mode
• Automatic sleep mode for power saving
• Built-in error correction code (ECC) for data integrity
• Block erase and sector erase functions
• Write protection feature for data security

Advantages and Disadvantages

Advantages: - Fast access time - Large storage capacity - Low power consumption - Reliable performance - Error correction capability

Disadvantages: - Limited endurance (limited number of erase/write cycles) - Relatively high cost compared to other memory technologies

Working Principles

The R1LV0408DSB-5SI#B0 is a flash memory chip that stores data electronically. It utilizes floating-gate transistors to trap electrical charges, representing binary information as "0" or "1". The stored data remains intact even when the power supply is disconnected.

During read operations, the chip retrieves the stored data by sensing the voltage levels on the memory cells. Write operations involve applying higher voltages to the selected memory cells to either store new data or erase existing data.

Detailed Application Field Plans

The R1LV0408DSB-5SI#B0 chip finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Mobile phones - Digital cameras - Gaming consoles - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. R1LV0408DSB-7SI#B0: Similar to R1LV0408DSB-5SI#B0, but with a faster access time of 70 ns.
2. R1LV0408DSB-10SI#B0: Similar to R1LV0408DSB-5SI#B0, but with a slower access time of 100 ns.
3. R1LV0408DSB-5SI#B1: Similar to R1LV0408DSB-5SI#B0, but with an extended operating temperature range (-40°C to +105°C).

These alternative models provide options based on specific requirements such as speed, temperature range, and compatibility.

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