R1LV0816ASB-7SI#B0

Product Overview

Category

R1LV0816ASB-7SI#B0 belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, and other digital systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact size

Package

R1LV0816ASB-7SI#B0 comes in a small form factor package, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

The product is typically packaged in reels or trays, with a specific quantity per package depending on the manufacturer's specifications.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 8 Megabits (1 Megabyte)
• Organization: 1M words x 8 bits
• Supply Voltage: 3.3V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of R1LV0816ASB-7SI#B0 is as follows:

1. Vcc (Power Supply)
2. GND (Ground)
3. A0-A19 (Address Inputs)
4. DQ0-DQ7 (Data Inputs/Outputs)
5. WE (Write Enable)
6. OE (Output Enable)
7. CE (Chip Enable)

Functional Features

• Fast random access time for efficient data retrieval.
• Low power consumption for energy-efficient operation.
• Non-volatile storage capability ensures data retention even when power is lost.
• Easy integration into various electronic systems due to its compact size and standard interface.

Advantages and Disadvantages

Advantages

• High-speed operation allows for quick data access.
• Large storage capacity accommodates a wide range of applications.
• Low power consumption prolongs battery life in portable devices.
• Compact size enables integration into space-constrained designs.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited endurance compared to non-volatile memory types.
• Requires continuous power supply to retain stored data.

Working Principles

R1LV0816ASB-7SI#B0 operates based on the principles of static random access memory (SRAM). It utilizes flip-flop circuits to store each bit of data, allowing for fast read and write operations. The stored data is retained as long as power is supplied to the device.

Detailed Application Field Plans

R1LV0816ASB-7SI#B0 finds application in various electronic systems, including but not limited to: - Personal computers - Laptops and notebooks - Servers and data centers - Mobile phones and tablets - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to R1LV0816ASB-7SI#B0 include: - R1LV0416DSB-5SI#B0 - R1LV1616RSA-7SI#B0 - R1LV1616RSA-10SI#B0 - R1LV1616RSA-12SI#B0

These models provide different capacities, access times, or temperature ranges to cater to specific application requirements.

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