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R1LV5256ESA-5SI#S1

R1LV5256ESA-5SI#S1

Product Overview

Category

R1LV5256ESA-5SI#S1 belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic systems.

Characteristics

  • High-speed operation
  • Low power consumption
  • Large storage capacity
  • Compact package size

Package

The R1LV5256ESA-5SI#S1 is available in a small outline package (SOP) format.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

The R1LV5256ESA-5SI#S1 is typically packaged in reels or trays, with a quantity of [specify quantity].

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 32,768 words x 8 bits
  • Operating Voltage: 3.0V - 3.6V
  • Access Time: 55 ns
  • Standby Current: 10 μA (typical)
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The R1LV5256ESA-5SI#S1 has the following pin configuration:

  1. Vcc (Power Supply)
  2. GND (Ground)
  3. A0-A14 (Address Inputs)
  4. DQ0-DQ7 (Data Inputs/Outputs)
  5. CE (Chip Enable)
  6. WE (Write Enable)
  7. OE (Output Enable)

Functional Features

  • High-speed access and data transfer
  • Non-volatile storage
  • Easy integration into existing electronic systems
  • Low power consumption
  • Reliable performance in harsh environments

Advantages

  • Fast data access and retrieval
  • Low power consumption
  • Compact package size
  • Wide operating temperature range

Disadvantages

  • Limited storage capacity compared to other memory technologies
  • Relatively higher cost per bit compared to alternative memory devices

Working Principles

The R1LV5256ESA-5SI#S1 operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The device uses a combination of transistors and capacitors to store and retrieve digital data.

Detailed Application Field Plans

The R1LV5256ESA-5SI#S1 is commonly used in various electronic systems, including:

  1. Computer motherboards
  2. Networking equipment
  3. Industrial control systems
  4. Automotive electronics
  5. Medical devices

Detailed and Complete Alternative Models

  1. R1LV5256ESA-5SI#S2
  2. R1LV5256ESA-5SI#S3
  3. R1LV5256ESA-5SI#S4
  4. R1LV5256ESA-5SI#S5

These alternative models offer similar specifications and functionality to the R1LV5256ESA-5SI#S1, providing customers with options based on their specific requirements.

In conclusion, the R1LV5256ESA-5SI#S1 is a high-speed, low-power semiconductor memory device primarily used for data storage and retrieval in various electronic systems. Its compact package size, reliable performance, and wide operating temperature range make it suitable for a range of applications. While it has limitations in terms of storage capacity and cost per bit, there are alternative models available to cater to different needs.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací R1LV5256ESA-5SI#S1 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of R1LV5256ESA-5SI#S1 in technical solutions:

Q1: What is R1LV5256ESA-5SI#S1? A1: R1LV5256ESA-5SI#S1 is a specific model of synchronous static RAM (SRAM) chip manufactured by Renesas Electronics. It has a capacity of 32 kilobits (Kb) and operates at a speed of 5 nanoseconds (ns).

Q2: What are the typical applications of R1LV5256ESA-5SI#S1? A2: R1LV5256ESA-5SI#S1 is commonly used in various technical solutions, such as embedded systems, industrial automation, telecommunications equipment, networking devices, and automotive electronics.

Q3: What is the voltage requirement for R1LV5256ESA-5SI#S1? A3: R1LV5256ESA-5SI#S1 operates at a voltage range of 4.5V to 5.5V.

Q4: Can R1LV5256ESA-5SI#S1 be used in battery-powered devices? A4: Yes, R1LV5256ESA-5SI#S1 can be used in battery-powered devices as long as the voltage requirements are met.

Q5: Does R1LV5256ESA-5SI#S1 support multiple read/write operations simultaneously? A5: No, R1LV5256ESA-5SI#S1 is a synchronous SRAM and supports only one read or write operation at a time.

Q6: What is the operating temperature range for R1LV5256ESA-5SI#S1? A6: R1LV5256ESA-5SI#S1 has an operating temperature range of -40°C to +85°C.

Q7: Can R1LV5256ESA-5SI#S1 be used in high-speed data processing applications? A7: Yes, R1LV5256ESA-5SI#S1 operates at a speed of 5ns, making it suitable for high-speed data processing applications.

Q8: Does R1LV5256ESA-5SI#S1 have any built-in error correction capabilities? A8: No, R1LV5256ESA-5SI#S1 does not have built-in error correction capabilities. Additional error correction mechanisms may need to be implemented if required.

Q9: Is R1LV5256ESA-5SI#S1 compatible with common microcontrollers and processors? A9: Yes, R1LV5256ESA-5SI#S1 is compatible with a wide range of microcontrollers and processors that support synchronous SRAM interfaces.

Q10: What is the package type for R1LV5256ESA-5SI#S1? A10: R1LV5256ESA-5SI#S1 is available in a 28-pin SOP (Small Outline Package) format.

Please note that these answers are general and specific details may vary depending on the application and requirements.