BR24T16FJ-WE2

Product Overview

Category: Integrated Circuit (IC)

Use: Data storage and retrieval

Characteristics: - Non-volatile memory - High-speed read and write operations - Low power consumption - Wide operating voltage range - Small form factor

Package: SOP-8 (Small Outline Package)

Essence: BR24T16FJ-WE2 is a high-performance EEPROM (Electrically Erasable Programmable Read-Only Memory) IC that provides non-volatile data storage capabilities.

Packaging/Quantity: The BR24T16FJ-WE2 is typically sold in reels, with each reel containing 2500 units.

Specifications

• Memory Capacity: 16 kilobits (2 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Operating Voltage Range: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Write Endurance: 1 million cycles
• Data Retention: 100 years

Detailed Pin Configuration

The BR24T16FJ-WE2 IC has the following pin configuration:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VSS | Ground | | 2 | SDA | Serial Data Input/Output | | 3 | SCL | Serial Clock Input | | 4 | WP | Write Protect | | 5 | VCC | Power Supply | | 6 | NC | No Connection | | 7 | NC | No Connection | | 8 | VSS | Ground |

Functional Features

• Random access to stored data
• Byte-wise read and write operations
• Software write protection
• Page write mode for faster data transfers
• Self-timed programming cycle

Advantages and Disadvantages

Advantages: - Non-volatile memory ensures data retention even during power loss - High-speed read and write operations enable quick data access - Low power consumption prolongs battery life in portable devices - Wide operating voltage range allows compatibility with various systems - Small form factor saves space in compact designs

Disadvantages: - Limited storage capacity compared to other memory technologies - Relatively higher cost per kilobit compared to larger capacity EEPROMs - Limited endurance of write cycles may require careful management in certain applications

Working Principles

The BR24T16FJ-WE2 utilizes EEPROM technology, which allows for electrically erasing and reprogramming of data. It uses a floating gate transistor structure to store charge, representing binary information. The stored charge can be read, written, or erased using specific electrical signals.

Detailed Application Field Plans

The BR24T16FJ-WE2 is commonly used in various electronic devices and systems, including but not limited to: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive electronics (e.g., infotainment systems, engine control units) - Industrial automation (e.g., programmable logic controllers, sensors) - Medical devices (e.g., patient monitoring systems, diagnostic equipment)

Detailed and Complete Alternative Models

1. BR24T16F-WE2: Similar to BR24T16FJ-WE2, but without the SOP-8 package option.
2. BR24T08FJ-WE2: Half the memory capacity of BR24T16FJ-WE2 (8 kilobits).
3. BR24T32FJ-WE2: Double the memory capacity of BR24T16FJ-WE2 (32 kilobits).

These alternative models offer different memory capacities and package options to suit specific application requirements.

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