GP1UE267RK0F

Product Overview

• Category: Optoelectronics
• Use: Infrared Emitting Diode
• Characteristics: High power output, compact size, low power consumption
• Package: Surface mount
• Essence: Infrared light emission for various applications
• Packaging/Quantity: Available in reels of 3000 units

Specifications

• Wavelength: 940nm
• Forward Current: 100mA
• Forward Voltage: 1.35V
• Radiant Intensity: 20mW/sr

Detailed Pin Configuration

• Pin 1: Anode
• Pin 2: Cathode

Functional Features

• High radiant intensity
• Wide operating temperature range
• Low forward voltage

Advantages and Disadvantages

Advantages

• High power output
• Compact size
• Low power consumption

Disadvantages

• Limited radiant angle

Working Principles

The GP1UE267RK0F operates by converting electrical energy into infrared light through the process of electroluminescence. When a forward voltage is applied across the anode and cathode pins, the diode emits infrared light with a wavelength of 940nm.

Detailed Application Field Plans

The GP1UE267RK0F is widely used in applications such as: - Proximity sensors - Object detection - Remote controls - Optical encoders

Detailed and Complete Alternative Models

• GP1UX311QS0F
• GP1UX511QS0F
• GP1UW701QS0F
• GP1UW702QS0F

This comprehensive range of alternative models provides options with varying specifications to suit different application requirements.

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This entry provides a detailed overview of the GP1UE267RK0F, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.