GP1UE293QK0F

Product Overview

• Category: Optoelectronic Component
• Use: Infrared Emitting Diode
• Characteristics: High efficiency, low power consumption
• Package: Surface Mount Device (SMD)
• Essence: Infrared light emission
• Packaging/Quantity: Tape and Reel, 3000 pieces per reel

Specifications

• Wavelength: 940nm
• Forward Current: 50mA
• Forward Voltage: 1.2V
• Radiant Intensity: 20mW/sr

Detailed Pin Configuration

The GP1UE293QK0F has a standard SMD pin configuration with anode and cathode pins for easy integration into circuit boards.

Functional Features

• High radiant intensity
• Wide operating temperature range
• Low forward voltage

Advantages and Disadvantages

Advantages

• Efficient infrared light emission
• Low power consumption
• Compact SMD package

Disadvantages

• Limited radiant intensity compared to some alternatives
• Sensitive to static electricity

Working Principles

The GP1UE293QK0F operates by converting electrical energy into infrared light through the process of electroluminescence. When a forward voltage is applied, electrons and holes recombine in the semiconductor material, emitting infrared radiation.

Detailed Application Field Plans

The GP1UE293QK0F is suitable for various applications including: - Infrared remote controls - Proximity sensors - Optical encoders - Object detection systems

Detailed and Complete Alternative Models

• GP1UX311QS
• TSAL6200
• SFH 4550

This completes the entry for GP1UE293QK0F, providing comprehensive information on its category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.