GP1USC32XP

Product Overview

• Category: Optoelectronics
• Use: Infrared Emitting Diode
• Characteristics: High power output, compact size, low power consumption
• Package: Surface mount package
• Essence: Infrared emitting diode for various applications
• Packaging/Quantity: Available in reels of 2000 pieces

Specifications

• Wavelength: 940nm
• Forward Current: 100mA
• Forward Voltage: 1.35V
• Radiant Intensity: 20mW/sr

Detailed Pin Configuration

The GP1USC32XP has a standard 3-pin configuration with the following layout: 1. Anode 2. Cathode 3. No Connection

Functional Features

• High radiant intensity
• Wide operating temperature range
• Low forward voltage
• Fast response time

Advantages and Disadvantages

Advantages

• Compact size
• Low power consumption
• High power output

Disadvantages

• Limited viewing angle
• Sensitive to static electricity

Working Principles

The GP1USC32XP operates by converting electrical energy into infrared radiation, making it suitable for various sensing and communication applications.

Detailed Application Field Plans

The GP1USC32XP is commonly used in the following applications: - Proximity sensors - Object detection - Remote controls - Optical encoders

Detailed and Complete Alternative Models

• GP1UX311QS
• GP1U58X

This completes the English editing encyclopedia entry structure format for GP1USC32XP, providing comprehensive information about its product details, specifications, features, and applications.