GP2S60B Encyclopedia Entry

Introduction

The GP2S60B is a key component in the field of electronic devices, specifically belonging to the category of optoelectronic sensors. This entry will provide an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: Optoelectronic sensor
• Use: The GP2S60B is commonly used for detecting the presence or absence of an object by utilizing an infrared emitting diode and a phototransistor.
• Characteristics: It is characterized by its compact size, high sensitivity, and low power consumption.
• Package: The GP2S60B is typically available in a small, surface-mount package.
• Essence: Its essence lies in its ability to accurately detect objects without physical contact.
• Packaging/Quantity: It is usually supplied in reels containing a specific quantity per reel.

Specifications

• Operating Wavelength: 950 nm
• Supply Voltage: 4.5 V to 16 V
• Output Current: 50 mA
• Rise Time: 3 µs
• Fall Time: 1 µs
• Operating Temperature Range: -25°C to 85°C

Detailed Pin Configuration

The GP2S60B typically consists of four pins: 1. Anode of Infrared Emitting Diode (IRED) 2. Cathode of IRED 3. Collector of Phototransistor 4. Emitter of Phototransistor

Functional Features

• High Sensitivity: The GP2S60B exhibits high sensitivity, allowing it to detect even subtle changes in the presence of an object.
• Compact Design: Its compact design enables easy integration into various electronic devices and applications.
• Low Power Consumption: With low power requirements, it is suitable for battery-operated devices.

Advantages and Disadvantages

Advantages

• Accurate object detection
• Compact size
• Low power consumption

Disadvantages

• Limited range of detection
• Susceptible to ambient light interference

Working Principles

The GP2S60B operates based on the principle of modulated infrared light. When an object is present, it obstructs the path of the emitted infrared light, causing a change in the phototransistor's conductivity, which is then converted into a corresponding electrical signal.

Detailed Application Field Plans

The GP2S60B finds extensive use in various applications, including but not limited to: - Object detection in automated machinery - Proximity sensing in consumer electronics - Position sensing in robotics - Reflective sensors in printers and copiers

Detailed and Complete Alternative Models

Several alternative models to the GP2S60B include: - GP2S700HCP - GP2S40 - GP2S27

In conclusion, the GP2S60B serves as a crucial component in the realm of optoelectronic sensors, offering high sensitivity and compact design. Its applications span across diverse industries, making it a versatile choice for object detection and proximity sensing needs.

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