STW28N60DM2

Introduction

The STW28N60DM2 belongs to the category of power MOSFETs and is widely used in various electronic applications. This device offers high performance, reliability, and efficiency, making it suitable for a range of power management tasks.

Basic Information Overview

Category: Power MOSFET
Use: Power management applications
Characteristics: High performance, reliability, efficiency
Package: TO-247
Essence: High-power switching applications
Packaging/Quantity: Typically available in reels or tubes

Specifications

The STW28N60DM2 features the following specifications: - Drain-Source Voltage (VDS): 600V - Continuous Drain Current (ID): 28A - On-state Resistance (RDS(on)): 0.14Ω - Power Dissipation (PD): 300W - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The pin configuration of the STW28N60DM2 is as follows: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

High voltage capability
Low input and output capacitance
Fast switching speed
Low gate charge
Avalanche ruggedness

Advantages and Disadvantages

Advantages

High voltage tolerance
Efficient power management
Fast switching speed
Low power dissipation

Disadvantages

Higher cost compared to standard MOSFETs
Sensitive to static electricity

Working Principles

The STW28N60DM2 operates based on the principles of field-effect transistors, utilizing its high voltage capability and low on-state resistance to efficiently control power flow in various applications.

Detailed Application Field Plans

The STW28N60DM2 finds extensive use in the following application fields: - Switched-mode power supplies - Motor control - Inverters - Welding equipment - Solar inverters - Uninterruptible power supplies (UPS)

Detailed and Complete Alternative Models

Some alternative models to the STW28N60DM2 include: - IRFP460 - FDPF33N25 - IXFN38N100Q2

In conclusion, the STW28N60DM2 power MOSFET offers high-performance characteristics, making it a reliable choice for power management applications across various industries.

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