SSM3K15AFS,LF

Product Overview

Category: Semiconductor
Use: Power MOSFET for switching applications
Characteristics: Low on-resistance, small package size, high-speed switching
Package: Ultra-small and thin TSON-6 package
Essence: Efficient power management
Packaging/Quantity: Tape and reel, 3000 pieces per reel

Specifications

• Voltage Rating: 20V
• Continuous Drain Current (ID): 3A
• On-Resistance (RDS(ON)): 75mΩ (typical) at VGS = 4.5V
• Gate Threshold Voltage (VGS(th)): 1.0V (typical)
• Total Gate Charge (Qg): 2.8nC (typical)

Detailed Pin Configuration

The SSM3K15AFS,LF features a TSON-6 package with the following pin configuration: 1. Source 2. Gate 3. Drain 4. Not connected 5. Drain 6. Source

Functional Features

• Low on-resistance for minimal power loss
• Fast switching speed for efficient power management
• Small package size for space-constrained applications

Advantages and Disadvantages

Advantages: - High efficiency due to low on-resistance - Compact size enables use in small devices - Fast switching speed enhances power management

Disadvantages: - Limited voltage rating of 20V - Not suitable for high-power applications

Working Principles

The SSM3K15AFS,LF operates based on the principles of field-effect transistors, utilizing the control of voltage on the gate terminal to regulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is ideal for use in portable electronic devices, such as smartphones, tablets, and wearable technology, where efficient power management and small form factor are crucial.

Detailed and Complete Alternative Models

1. SSM3K15AMFX,LF
2. SSM3K15AMT,LF
3. SSM3K15AMT,LF

Note: The alternative models listed above offer similar specifications and functionality.

This comprehensive entry provides an in-depth understanding of the SSM3K15AFS,LF, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.