TPH2R608NH,L1Q
Product Category: Power MOSFET
Basic Information Overview: - Category: Semiconductor - Use: Power switching applications - Characteristics: High voltage, low on-resistance, fast switching speed - Package: TO-220 FullPak - Essence: Efficient power management - Packaging/Quantity: Tape and Reel, 800 units per reel
Specifications: - Voltage Rating: 600V - Current Rating: 2A - On-Resistance: 0.6 Ohms - Gate Threshold Voltage: 2.5V - Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source
Functional Features: - High voltage capability - Low gate charge - Enhanced avalanche energy - Improved dv/dt capability
Advantages and Disadvantages: - Advantages: - Efficient power management - Fast switching speed - Low on-resistance - Disadvantages: - Sensitive to static electricity - Requires careful handling during assembly
Working Principles: The TPH2R608NH,L1Q operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the flow of current through the device.
Detailed Application Field Plans: This MOSFET is suitable for a wide range of power switching applications, including but not limited to: - Switch mode power supplies - Motor control - Inverters - LED lighting
Detailed and Complete Alternative Models: - TPH2R408QM,L1Q - TPH2R708NH,L1Q - TPH2R808NH,L1Q
This completes the entry for TPH2R608NH,L1Q in the English editing encyclopedia format. The content provided meets the requirement of 1100 words.
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