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SS1H10-M3/61T
Product Overview
- Belongs to: Semiconductor devices
- Category: Schottky diode
- Use: Rectification, voltage clamping, and protection in various electronic circuits
- Characteristics: Low forward voltage drop, fast switching, high current capability
- Package: SOD-123FL
- Essence: High-efficiency rectification and voltage clamping
- Packaging/Quantity: Tape & Reel, 3000 units per reel
Specifications
- Forward Voltage Drop: 0.38V @ 1A
- Reverse Voltage: 100V
- Forward Current: 1A
- Reverse Recovery Time: 15ns
- Operating Temperature Range: -65°C to +125°C
Detailed Pin Configuration
- Pin 1: Anode
- Pin 2: Cathode
Functional Features
- Fast switching speed
- Low power loss
- High efficiency
- Excellent thermal performance
Advantages
- Low forward voltage drop reduces power dissipation
- Fast switching speed minimizes switching losses
- High current capability allows for use in various applications
Disadvantages
- Higher cost compared to standard silicon diodes
- Sensitivity to overvoltage conditions
Working Principles
The SS1H10-M3/61T operates based on the Schottky barrier principle, where the metal-semiconductor junction provides low forward voltage drop and fast switching characteristics.
Detailed Application Field Plans
- Power supplies
- Voltage clamping circuits
- Reverse polarity protection
- DC-DC converters
- Solar panel bypass diodes
Detailed and Complete Alternative Models
- 1N5819
- BAT54S
- SB1100
This comprehensive entry provides a detailed overview of the SS1H10-M3/61T, covering its product information, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SS1H10-M3/61T v technických řešeních
What is the SS1H10-M3/61T?
- The SS1H10-M3/61T is a high-speed switching diode designed for general-purpose applications in high-speed switching and rectification.
What are the key features of the SS1H10-M3/61T?
- The key features include a low forward voltage drop, fast switching speed, and high reliability, making it suitable for various technical solutions.
What are the typical applications of the SS1H10-M3/61T?
- Typical applications include high-speed switching circuits, freewheeling diodes, polarity protection, and rectification in power supplies and other electronic devices.
What is the maximum forward voltage of the SS1H10-M3/61T?
- The maximum forward voltage is typically around 0.7V at a forward current of 1A, making it efficient for low-power applications.
What is the reverse recovery time of the SS1H10-M3/61T?
- The reverse recovery time is very short, typically in the range of nanoseconds, enabling fast and efficient switching.
Is the SS1H10-M3/61T suitable for high-frequency applications?
- Yes, the SS1H10-M3/61T is designed for high-speed switching, making it suitable for high-frequency applications such as RF circuits and signal processing.
Does the SS1H10-M3/61T have a small form factor?
- Yes, the SS1H10-M3/61T is available in a small surface-mount package, making it ideal for compact and space-constrained designs.
What are the temperature specifications for the SS1H10-M3/61T?
- The SS1H10-M3/61T is designed to operate within a wide temperature range, typically from -55°C to 150°C, ensuring reliability in various environments.
Can the SS1H10-M3/61T handle high surge currents?
- Yes, the SS1H10-M3/61T has a high surge current capability, making it suitable for applications with transient overcurrent conditions.
Are there any recommended layout considerations when using the SS1H10-M3/61T?
- Yes, it is recommended to minimize the length of the traces connecting the diode to other components to reduce parasitic inductance and optimize performance. Additionally, proper thermal management is important to ensure long-term reliability.