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2N4117A-2
Product Overview
Category
The 2N4117A-2 belongs to the category of field-effect transistors (FETs).
Use
It is commonly used as a high-frequency amplifier and switching device in electronic circuits.
Characteristics
- Low noise figure
- High gain
- High input impedance
Package
The 2N4117A-2 is typically available in TO-18 metal can package.
Essence
This FET is essential for amplifying and switching signals in various electronic applications.
Packaging/Quantity
The 2N4117A-2 is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (Vds): 35V
- Gate-Source Voltage (Vgs): ±40V
- Drain Current (Id): 10mA
- Power Dissipation (Pd): 350mW
- Operating Temperature Range: -55°C to +150°C
Detailed Pin Configuration
- Source (S)
- Gate (G)
- Drain (D)
Functional Features
- High input impedance
- Low noise figure
- Suitable for high-frequency applications
Advantages
- Low noise performance
- High gain
- Wide operating temperature range
Disadvantages
- Limited drain-source voltage
- Relatively low drain current rating
Working Principles
The 2N4117A-2 operates based on the field effect, where the voltage applied to the gate terminal controls the conductivity of the channel between the source and drain terminals.
Detailed Application Field Plans
The 2N4117A-2 is widely used in: - Radio frequency (RF) amplifiers - Oscillator circuits - Signal switching applications
Detailed and Complete Alternative Models
- 2N4117
- 2N4118
- 2N4119
In conclusion, the 2N4117A-2 is a versatile field-effect transistor with excellent high-frequency performance, making it suitable for various electronic applications.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 2N4117A-2 v technických řešeních
What is the 2N4117A-2 transistor used for?
- The 2N4117A-2 transistor is commonly used as a high-frequency amplifier or switch in technical solutions.
What are the key specifications of the 2N4117A-2 transistor?
- The 2N4117A-2 is a JFET (junction field-effect transistor) with a low noise figure, high gain, and high input impedance, making it suitable for various RF applications.
How can the 2N4117A-2 be utilized in radio frequency (RF) circuits?
- The 2N4117A-2 can be employed in RF circuits as an amplifier to boost signal strength or as a switch to control the flow of RF signals.
What are the typical operating conditions for the 2N4117A-2 transistor?
- The 2N4117A-2 operates under standard JFET conditions, typically at low power levels and with appropriate biasing to achieve the desired performance.
Can the 2N4117A-2 be used in low-noise amplifier (LNA) designs?
- Yes, the 2N4117A-2's low noise figure makes it well-suited for LNA designs, particularly in RF and microwave applications.
Are there any specific considerations when designing with the 2N4117A-2?
- Designers should pay attention to proper biasing, matching impedances, and minimizing parasitic effects to fully leverage the performance of the 2N4117A-2.
In what types of technical solutions is the 2N4117A-2 commonly integrated?
- The 2N4117A-2 is often integrated into RF communication systems, radar systems, test equipment, and other high-frequency electronic devices.
What are the advantages of using the 2N4117A-2 in technical solutions?
- The 2N4117A-2 offers high gain, low noise, and good linearity, making it valuable in applications where these characteristics are essential.
How does the 2N4117A-2 compare to other transistors for similar applications?
- Compared to other transistors, the 2N4117A-2 stands out for its low noise figure and high input impedance, which are advantageous in many RF and high-frequency applications.
Where can I find detailed application notes or reference designs for the 2N4117A-2?
- Detailed application notes and reference designs for the 2N4117A-2 can be found in technical literature from semiconductor manufacturers, electronics engineering resources, and application-specific publications.