Vishay Siliconix
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IRF644NSTRL
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IRF644NSTRL

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high current applications
Characteristics: High voltage, high current capability, low on-resistance
Package: TO-220AB
Essence: Power MOSFET for high current switching applications
Packaging/Quantity: Available in reels of 2500 units

Specifications

  • Voltage Rating: 250V
  • Continuous Drain Current: 17A
  • RDS(ON): 0.14 Ohm
  • Gate Threshold Voltage: 2V to 4V
  • Power Dissipation: 94W

Detailed Pin Configuration

  1. Gate (G)
  2. Drain (D)
  3. Source (S)

Functional Features

  • Low RDS(ON) for minimal power dissipation
  • Fast switching speed for efficient operation
  • High input impedance for easy drive requirements
  • Avalanche ruggedness for reliable operation in tough conditions

Advantages

  • High voltage and current handling capability
  • Low on-resistance for reduced power loss
  • Reliable and rugged design for harsh environments
  • Versatile applications in power electronics

Disadvantages

  • Higher gate capacitance may require careful driver design
  • Not suitable for low-voltage applications

Working Principles

The IRF644NSTRL operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the MOSFET allows a high current to flow through it with minimal resistance.

Detailed Application Field Plans

  1. Power Supplies: Used in high-power switch-mode power supplies for efficient voltage regulation.
  2. Motor Control: Employed in motor drive circuits for controlling high-current motors.
  3. Inverters: Utilized in DC to AC inverters for converting power efficiently.

Detailed and Complete Alternative Models

  1. IRF640N: Similar specifications with slightly lower voltage and current ratings.
  2. IRF740: Higher voltage and current ratings for more demanding applications.
  3. IRF840: Enhanced power dissipation capability for higher power applications.

Note: The above information is for reference purposes only. Always refer to the datasheet for accurate and up-to-date specifications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IRF644NSTRL v technických řešeních

  1. What is the maximum drain-source voltage of IRF644NSTRL?

    • The maximum drain-source voltage of IRF644NSTRL is 250 volts.

  2. What is the continuous drain current rating of IRF644NSTRL?

    • The continuous drain current rating of IRF644NSTRL is 14 amperes.

  3. What is the on-state resistance (RDS(on)) of IRF644NSTRL?

    • The on-state resistance (RDS(on)) of IRF644NSTRL is typically 0.15 ohms.

  4. Can IRF644NSTRL be used for switching applications?

    • Yes, IRF644NSTRL is suitable for switching applications due to its low on-state resistance and high drain-source voltage rating.

  5. What is the maximum power dissipation of IRF644NSTRL?

    • The maximum power dissipation of IRF644NSTRL is 150 watts.

  6. Is IRF644NSTRL suitable for use in motor control applications?

    • Yes, IRF644NSTRL can be used in motor control applications due to its high current and voltage ratings.

  7. Does IRF644NSTRL require a heat sink for high-power applications?

    • Yes, for high-power applications, it is recommended to use a heat sink to dissipate heat effectively.

  8. What are the typical gate-source threshold voltage and gate charge of IRF644NSTRL?

    • The typical gate-source threshold voltage is 2-4 volts, and the gate charge is 38nC.

  9. Can IRF644NSTRL be used in audio amplifier circuits?

    • Yes, IRF644NSTRL can be used in audio amplifier circuits, especially for high-power amplification.

  10. What are some common protection measures when using IRF644NSTRL in circuit designs?

    • Common protection measures include overcurrent protection, overvoltage protection, and thermal management to ensure safe operation of the device.