IRFR220PBF

Product Overview

Category: Power MOSFET
Use: Switching applications
Characteristics: High voltage, low on-resistance
Package: TO-252
Essence: Power transistor for electronic switching applications
Packaging/Quantity: Available in reels of 2500 units

Specifications

• Voltage Rating: 200V
• Continuous Drain Current: 4.3A
• On-Resistance: 0.55 Ohms
• Gate Threshold Voltage: 2V to 4V
• Power Dissipation: 2.5W

Detailed Pin Configuration

The IRFR220PBF MOSFET has three pins: 1. Gate (G): Input for controlling the flow of current 2. Drain (D): Output terminal for the current flow 3. Source (S): Reference point for the current flow

Functional Features

• Low on-resistance for minimal power loss
• High voltage rating for versatile applications
• Fast switching speed for efficient operation

Advantages and Disadvantages

Advantages: - High voltage capability - Low on-resistance - Fast switching speed

Disadvantages: - Sensitive to static electricity - Gate oxide is susceptible to damage if mishandled

Working Principles

The IRFR220PBF operates based on the principle of field-effect transistors. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IRFR220PBF is commonly used in various electronic applications such as: - Power supplies - Motor control - LED lighting - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the IRFR220PBF include: - IRFZ44N - FQP30N06L - IRL540

In conclusion, the IRFR220PBF is a high-voltage power MOSFET with low on-resistance, suitable for a wide range of switching applications in electronics.

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