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IRFS9N60APBF
Product Category: Power MOSFET
Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplification in power electronics applications - Characteristics: High voltage, low on-resistance, fast switching speed - Package: TO-220AB - Essence: N-channel power MOSFET - Packaging/Quantity: Available in reels or tubes, quantity varies by manufacturer
Specifications: - Voltage Rating: 600V - Current Rating: 9A - On-Resistance (max): 0.85Ω - Gate Threshold Voltage (typ): 2-4V - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration: - Pin 1 (G): Gate - Pin 2 (D): Drain - Pin 3 (S): Source
Functional Features: - High voltage capability - Low gate charge - Fast switching speed - Avalanche energy specified - Improved dv/dt capability
Advantages: - Suitable for high power applications - Low conduction losses - Reduced switching losses - Enhanced thermal performance - Reliable operation at high temperatures
Disadvantages: - Higher cost compared to lower voltage MOSFETs - Requires careful handling due to sensitivity to static electricity
Working Principles: The IRFS9N60APBF operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a positive voltage is applied to the gate, it creates an electric field that allows current to flow through the MOSFET.
Detailed Application Field Plans: - Switch mode power supplies - Motor control - Inverters - Induction heating - Uninterruptible power supplies (UPS) - Solar inverters
Detailed and Complete Alternative Models: - STP9NK60ZFP - FDPF9N50NZ - IPP60R190C6
This comprehensive entry provides an overview of the IRFS9N60APBF power MOSFET, including its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IRFS9N60APBF v technických řešeních
What is the maximum drain-source voltage of IRFS9N60APBF?
- The maximum drain-source voltage of IRFS9N60APBF is 600V.
What is the continuous drain current rating of IRFS9N60APBF?
- The continuous drain current rating of IRFS9N60APBF is 9A.
What is the on-state resistance (RDS(on)) of IRFS9N60APBF?
- The on-state resistance (RDS(on)) of IRFS9N60APBF is typically 1.5 ohms.
What is the gate threshold voltage of IRFS9N60APBF?
- The gate threshold voltage of IRFS9N60APBF typically ranges from 2 to 4V.
What are the typical applications for IRFS9N60APBF?
- IRFS9N60APBF is commonly used in power supplies, motor control, and lighting applications.
What is the operating temperature range of IRFS9N60APBF?
- The operating temperature range of IRFS9N60APBF is typically -55°C to 150°C.
Does IRFS9N60APBF require a heatsink for operation?
- Depending on the application and power dissipation, a heatsink may be required for IRFS9N60APBF.
What is the input capacitance of IRFS9N60APBF?
- The input capacitance of IRFS9N60APBF is typically around 1300pF.
Is IRFS9N60APBF suitable for high-frequency switching applications?
- IRFS9N60APBF is not specifically designed for high-frequency switching applications, but it can be used in moderate frequency applications.
What are the key differences between IRFS9N60APBF and similar MOSFETs?
- The key differences include voltage and current ratings, RDS(on) values, and switching characteristics. Always refer to the datasheets for detailed comparisons.