SI1417EDH-T1-GE3

Product Overview

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

High power handling capability
Low on-state resistance
Fast switching speed
Enhanced thermal performance

Package

The SI1417EDH-T1-GE3 is typically available in a compact and efficient package suitable for surface mount applications.

Essence

The essence of this product lies in its ability to efficiently manage power flow while minimizing losses.

Packaging/Quantity

It is usually supplied in reels containing a specific quantity, typically 3000 units per reel.

Specifications

Drain-Source Voltage (VDS): 30V
Continuous Drain Current (ID): 100A
RDS(ON) (Max) @ VGS = 10V: 1.4mΩ
Gate-Source Voltage (VGS) ±20V
Total Power Dissipation (PD): 200W

Detailed Pin Configuration

The SI1417EDH-T1-GE3 features a standard pin configuration with clearly defined gate, drain, and source terminals. The pinout is designed for easy integration into circuit layouts.

Functional Features

Low conduction losses
High current handling capability
Enhanced thermal performance
Fast switching characteristics

Advantages

Efficient power management
Reduced heat dissipation
Improved system reliability
Compact form factor

Disadvantages

Higher cost compared to traditional MOSFETs
Sensitivity to static discharge

Working Principles

The SI1417EDH-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

This power MOSFET is well-suited for a wide range of applications including: - Switching power supplies - Motor control - Battery management systems - LED lighting - Automotive electronics

Detailed and Complete Alternative Models

SI2302DS-T1-GE3
SI3443DV-T1-GE3
SI4562DY-T1-GE3
SI7850DP-T1-GE3

In conclusion, the SI1417EDH-T1-GE3 power MOSFET offers high-performance characteristics and is suitable for various power management applications, making it a versatile choice for engineers seeking efficient and reliable power switching solutions.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SI1417EDH-T1-GE3 v technických řešeních

What is the SI1417EDH-T1-GE3 used for in technical solutions?
- The SI1417EDH-T1-GE3 is a high-speed, low-capacitance silicon PIN diode designed for use in RF and microwave applications, such as switch matrices, attenuators, and phase shifters.
What are the key specifications of the SI1417EDH-T1-GE3?
- The key specifications include a low capacitance of 0.2 pF, a fast switching speed, and a high power handling capability, making it suitable for high-frequency applications.
How does the SI1417EDH-T1-GE3 compare to other diodes in its class?
- The SI1417EDH-T1-GE3 offers a combination of low capacitance, high power handling, and fast switching speed, making it well-suited for demanding RF and microwave applications.
What are the typical applications for the SI1417EDH-T1-GE3 in technical solutions?
- Typical applications include RF switches, phase shifters, attenuators, and other high-frequency signal control circuits.
What are the recommended operating conditions for the SI1417EDH-T1-GE3?
- The recommended operating conditions typically include a forward current of up to 100 mA, a reverse voltage of up to 50 V, and an operating temperature range from -55°C to +150°C.
Are there any application notes or reference designs available for using the SI1417EDH-T1-GE3 in technical solutions?
- Yes, the manufacturer provides application notes and reference designs to assist with the integration of the SI1417EDH-T1-GE3 into various technical solutions.
What are the potential challenges or considerations when integrating the SI1417EDH-T1-GE3 into a technical solution?
- Some potential considerations may include impedance matching, thermal management, and ensuring proper RF layout and grounding for optimal performance.
Can the SI1417EDH-T1-GE3 be used in high-power applications?
- Yes, the SI1417EDH-T1-GE3 is capable of handling high power levels, making it suitable for high-power RF and microwave applications.
What are the packaging options available for the SI1417EDH-T1-GE3?
- The SI1417EDH-T1-GE3 is available in a variety of surface-mount packages, such as SOT-23 and SC-79, providing flexibility for different design requirements.
Where can I find additional resources or support for designing with the SI1417EDH-T1-GE3?
- Additional resources, including datasheets, application notes, and technical support, can be found on the manufacturer's website or by contacting their technical support team directly.