SI2306BDS-T1-E3

Product Overview

• Category: Transistor
• Use: Power switching applications
• Characteristics: Low on-resistance, high-speed switching, small package size
• Package: SOT-23
• Essence: N-channel MOSFET
• Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Voltage - Drain-Source Breakdown (Max): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.7A
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 2.7A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) @ Vgs: 4.8nC @ 10V
• Input Capacitance (Ciss) @ Vds: 370pF @ 10V

Detailed Pin Configuration

• Pin 1 (G): Gate
• Pin 2 (D): Drain
• Pin 3 (S): Source

Functional Features

• High-speed switching
• Low on-resistance
• Low gate charge

Advantages and Disadvantages

• Advantages:
  • Small package size
  • Suitable for power switching applications
  • Low on-resistance
• Disadvantages:
  • Limited voltage and current ratings
  • Sensitivity to static discharge

Working Principles

The SI2306BDS-T1-E3 operates as an N-channel MOSFET, allowing it to control the flow of power in various electronic circuits. When a voltage is applied to the gate terminal, it creates an electric field that controls the conductivity between the drain and source terminals.

Detailed Application Field Plans

This transistor is commonly used in power management circuits, battery protection systems, and DC-DC converters due to its low on-resistance and high-speed switching capabilities. It is also suitable for load switching and motor control applications.

Detailed and Complete Alternative Models

• Alternative Model 1: SI2306BDS-T1-GE3
• Alternative Model 2: SI2306BDS-T1-E3-ND

Note: The alternative models listed above are similar in specifications and functionality to the SI2306BDS-T1-E3.

This completes the entry for SI2306BDS-T1-E3 according to the English editing encyclopedia format.