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SI2325DS-T1-E3
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SI2325DS-T1-E3

Product Overview

Category

The SI2325DS-T1-E3 belongs to the category of MOSFET transistors.

Use

It is commonly used as a switching device in electronic circuits, particularly in power management applications.

Characteristics

  • Low on-resistance
  • High current capability
  • Fast switching speed
  • Low gate drive voltage
  • Small package size

Package

The SI2325DS-T1-E3 is typically available in a small SOT-23 package.

Essence

The essence of this product lies in its ability to efficiently control and switch high currents in electronic circuits.

Packaging/Quantity

It is usually supplied in tape and reel packaging with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 3.7A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.7A, 4.5V
  • Input Capacitance (Ciss): 400pF
  • Power Dissipation (Pd): 1.25W

Detailed Pin Configuration

The SI2325DS-T1-E3 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-resistance for minimal power loss
  • Fast switching speed for efficient operation
  • Suitable for low-voltage applications
  • Compact size for space-constrained designs

Advantages and Disadvantages

Advantages

  • Efficient power management
  • Small form factor
  • Fast switching speed

Disadvantages

  • Limited maximum voltage and current ratings
  • Sensitivity to static electricity

Working Principles

The SI2325DS-T1-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SI2325DS-T1-E3 is widely used in various applications including: - Battery protection circuits - DC-DC converters - Load switches - Motor control circuits

Detailed and Complete Alternative Models

Some alternative models to the SI2325DS-T1-E3 include: - SI2301DS-T1-GE3 - SI2333DDS-T1-GE3 - SI2319DS-T1-GE3

In conclusion, the SI2325DS-T1-E3 MOSFET transistor offers efficient power management and fast switching capabilities, making it suitable for a wide range of electronic applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SI2325DS-T1-E3 v technických řešeních

  1. What is the maximum drain-source voltage of SI2325DS-T1-E3?

    • The maximum drain-source voltage of SI2325DS-T1-E3 is 20V.

  2. What is the continuous drain current of SI2325DS-T1-E3?

    • The continuous drain current of SI2325DS-T1-E3 is 3.7A.

  3. What is the on-resistance of SI2325DS-T1-E3?

    • The on-resistance of SI2325DS-T1-E3 is typically 80mΩ at Vgs=10V.

  4. What is the gate threshold voltage of SI2325DS-T1-E3?

    • The gate threshold voltage of SI2325DS-T1-E3 is typically 1-2V.

  5. Can SI2325DS-T1-E3 be used in automotive applications?

    • Yes, SI2325DS-T1-E3 is suitable for automotive applications.

  6. What is the operating temperature range of SI2325DS-T1-E3?

    • The operating temperature range of SI2325DS-T1-E3 is -55°C to 150°C.

  7. Is SI2325DS-T1-E3 RoHS compliant?

    • Yes, SI2325DS-T1-E3 is RoHS compliant.

  8. What are the typical applications for SI2325DS-T1-E3?

    • SI2325DS-T1-E3 is commonly used in load switching, power management, and battery protection applications.

  9. Does SI2325DS-T1-E3 have built-in ESD protection?

    • Yes, SI2325DS-T1-E3 features built-in ESD protection.

  10. What package type is SI2325DS-T1-E3 available in?

    • SI2325DS-T1-E3 is available in a SOT-23 package.