Viz Specifikace pro podrobnosti o produktu.
SI2329DS-T1-GE3
Product Overview
The SI2329DS-T1-GE3 belongs to the category of power MOSFETs and is commonly used in electronic circuits for switching and amplification purposes. This MOSFET is known for its high efficiency, low on-resistance, and compact package, making it suitable for a wide range of applications. The SI2329DS-T1-GE3 is typically packaged in a small outline transistor (SOT-23) package and is available in tape and reel packaging with a quantity of 3000 units per reel.
Specifications
- Voltage Rating: 20V
- Current Rating: 2.5A
- On-Resistance: 75mΩ
- Package Type: SOT-23
- Packaging: Tape and Reel, 3000 units per reel
Pin Configuration
The SI2329DS-T1-GE3 features a standard SOT-23 pin configuration with three pins: gate, drain, and source.
Functional Features
- High Efficiency: The SI2329DS-T1-GE3 offers low on-resistance, resulting in minimal power loss and high efficiency in electronic circuits.
- Fast Switching Speed: This MOSFET has a fast switching speed, making it suitable for applications requiring rapid switching.
Advantages and Disadvantages
Advantages - High efficiency - Low on-resistance - Compact package
Disadvantages - Limited voltage and current ratings compared to higher-power MOSFETs - Sensitive to static discharge
Working Principles
The SI2329DS-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device. When a voltage is applied to the gate terminal, the MOSFET allows current to flow between the drain and source terminals, effectively controlling the flow of current in the circuit.
Application Field Plans
The SI2329DS-T1-GE3 is commonly used in various applications, including: - Power management in portable electronics - Motor control in battery-powered devices - LED lighting systems - Switching regulators and converters
Alternative Models
For those seeking alternative models to the SI2329DS-T1-GE3, some options include: - SI2301DS-T1-GE3 - SI2333DDS-T1-GE3 - SI2319DS-T1-GE3
In conclusion, the SI2329DS-T1-GE3 is a versatile power MOSFET with high efficiency and fast switching speed, making it suitable for a wide range of electronic applications.
[Word count: 309]
Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SI2329DS-T1-GE3 v technických řešeních
What is the maximum drain-source voltage of SI2329DS-T1-GE3?
- The maximum drain-source voltage of SI2329DS-T1-GE3 is 20V.
What is the continuous drain current of SI2329DS-T1-GE3?
- The continuous drain current of SI2329DS-T1-GE3 is 4.2A.
What is the on-resistance of SI2329DS-T1-GE3?
- The on-resistance of SI2329DS-T1-GE3 is typically 0.045 ohms.
What is the gate threshold voltage of SI2329DS-T1-GE3?
- The gate threshold voltage of SI2329DS-T1-GE3 is typically 1.5V.
What are the typical applications for SI2329DS-T1-GE3?
- Typical applications for SI2329DS-T1-GE3 include power management, load switching, and battery protection in portable devices.
What is the operating temperature range of SI2329DS-T1-GE3?
- The operating temperature range of SI2329DS-T1-GE3 is -55°C to 150°C.
Is SI2329DS-T1-GE3 suitable for automotive applications?
- Yes, SI2329DS-T1-GE3 is suitable for automotive applications.
Does SI2329DS-T1-GE3 have built-in ESD protection?
- Yes, SI2329DS-T1-GE3 has built-in ESD protection.
What is the package type of SI2329DS-T1-GE3?
- SI2329DS-T1-GE3 comes in a SOT-23 package.
Is SI2329DS-T1-GE3 RoHS compliant?
- Yes, SI2329DS-T1-GE3 is RoHS compliant.