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SI4164DY-T1-GE3

SI4164DY-T1-GE3

Product Overview

Category

The SI4164DY-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used for power management applications in various electronic devices and systems.

Characteristics

  • High power handling capability
  • Low on-resistance
  • Fast switching speed
  • Enhanced thermal performance

Package

The SI4164DY-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.

Essence

This MOSFET offers high efficiency and reliability in power management solutions.

Packaging/Quantity

It is usually supplied in reels with a standard quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 16A
  • RDS(ON) (Max) @ VGS = 10V: 5.5mΩ
  • Gate-Source Voltage (VGS) (Max): ±20V
  • Total Gate Charge (Qg): 18nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI4164DY-T1-GE3 features the following pin configuration: 1. Gate (G) 2. Source (S) 3. Drain (D) 4. N/C 5. N/C 6. N/C 7. Source (S) 8. Drain (D)

Functional Features

  • Low on-resistance for minimal power loss
  • High current handling capacity
  • Fast switching characteristics for efficient power management

Advantages

  • Enhanced thermal performance
  • Compact and space-efficient package
  • Suitable for high-power applications

Disadvantages

  • Sensitive to electrostatic discharge (ESD)
  • Requires careful handling during assembly and soldering

Working Principles

The SI4164DY-T1-GE3 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SI4164DY-T1-GE3 is widely used in various applications including: - Switched-mode power supplies - Motor control systems - Battery management - LED lighting - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the SI4164DY-T1-GE3 include: - SI2301DS-T1-GE3 - SI2333DDS-T1-GE3 - SI2365EDS-T1-GE3 - SI2395DDS-T1-GE3

In conclusion, the SI4164DY-T1-GE3 power MOSFET offers high-performance characteristics and is suitable for a wide range of power management applications, making it a versatile choice for engineers and designers seeking efficient and reliable power solutions.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SI4164DY-T1-GE3 v technických řešeních

  1. What is the SI4164DY-T1-GE3 used for?

    • The SI4164DY-T1-GE3 is a dual N-channel MOSFET used for power management and switching applications in various technical solutions.
  2. What are the key features of the SI4164DY-T1-GE3?

    • The SI4164DY-T1-GE3 features low on-resistance, high current capability, and a compact package, making it suitable for space-constrained designs.
  3. What voltage and current ratings does the SI4164DY-T1-GE3 support?

    • The SI4164DY-T1-GE3 supports a voltage range of up to [insert voltage rating] and a current rating of [insert current rating], making it suitable for a wide range of applications.
  4. How can the SI4164DY-T1-GE3 be integrated into a technical solution?

    • The SI4164DY-T1-GE3 can be integrated as a power switch, motor driver, or load switch in various technical solutions requiring efficient power management.
  5. What are the thermal considerations for using the SI4164DY-T1-GE3?

    • Proper heat sinking and thermal management should be considered to ensure the SI4164DY-T1-GE3 operates within its specified temperature limits for optimal performance and reliability.
  6. Does the SI4164DY-T1-GE3 require any external components for operation?

    • Depending on the application, the SI4164DY-T1-GE3 may require external components such as gate drivers, resistors, and capacitors for proper operation and protection.
  7. What are the typical applications for the SI4164DY-T1-GE3 in technical solutions?

    • Typical applications include battery management systems, power supplies, motor control, and other power switching applications in industrial, automotive, and consumer electronics.
  8. What are the recommended PCB layout guidelines for using the SI4164DY-T1-GE3?

    • Proper PCB layout techniques, including minimizing trace lengths and providing adequate thermal relief, should be followed to optimize the performance and reliability of the SI4164DY-T1-GE3.
  9. Are there any specific ESD protection requirements for handling the SI4164DY-T1-GE3?

    • Proper ESD handling procedures and precautions should be followed to prevent damage to the SI4164DY-T1-GE3 during assembly and handling.
  10. Where can I find detailed technical specifications and application notes for the SI4164DY-T1-GE3?

    • Detailed technical specifications and application notes for the SI4164DY-T1-GE3 can be found in the product datasheet and application notes provided by the manufacturer.