SI4403BDY-T1-E3

Introduction

The SI4403BDY-T1-E3 is a power MOSFET belonging to the category of electronic components. This device is widely used in various applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: Switching and amplification in electronic circuits
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: DFN (Dual Flat No-Lead)
• Essence: Efficient power management
• Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Voltage Rating: 30V
• Current Rating: 8.7A
• On-Resistance: 14mΩ
• Gate Threshold Voltage: 1-2V
• Power Dissipation: 2.5W

Detailed Pin Configuration

The SI4403BDY-T1-E3 features a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).

Functional Features

• Fast switching speed for improved efficiency
• Low on-resistance for reduced power loss
• High voltage capability for versatile applications

Advantages and Disadvantages

Advantages - High voltage capability - Low on-resistance - Fast switching speed

Disadvantages - Sensitive to static electricity - Limited maximum current rating

Working Principles

The SI4403BDY-T1-E3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel.

Detailed Application Field Plans

This power MOSFET is commonly used in: - Power supply units - Motor control circuits - LED lighting systems - Battery management systems

Detailed and Complete Alternative Models

• SI2301DS-T1-GE3
• SI2333DDS-T1-GE3
• SI2365DS-T1-GE3

In conclusion, the SI4403BDY-T1-E3 power MOSFET offers high performance and reliability, making it an ideal choice for various electronic applications.

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